Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7Ca 0.3MnO3 device for nonvolatile memory applications

Dong Jun Seong; Jubong Park; Nodo Lee; Musarrat Hasan; Seungjae Jung; Hyejung Choi; Joonmyoung Lee; Minseok Jo; Wootae Lee; Sangsu Park; Seonghyun Kim; Yun Hee Jang; Y. Lee; M. Sung; D. Kil; Y. Hwang; S. Chung; S. Hong; J. Roh; Hyunsang Hwang

doi:10.1109/IEDM.2009.5424410

Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr_0.7Ca _0.3MnO₃ device for nonvolatile memory applications

Dong Jun Seong
, Jubong Park
, Nodo Lee
, Musarrat Hasan
, Seungjae Jung
, Hyejung Choi
, Joonmyoung Lee
, Minseok Jo
, Wootae Lee
, Sangsu Park
, Seonghyun Kim
, Yun Hee Jang
, Y. Lee
, M. Sung
, D. Kil
, Y. Hwang
, S. Chung
, S. Hong
, J. Roh
, Hyunsang Hwang

Department of Energy and Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

39 Scopus citations

Abstract

An in-depth study on the resistive switching mechanism of perovskite oxide based device was performed. Compared with filament type resistive switching device, excellent switching uniformity was obtained due to controlled redox reaction at metal/oxide interface. Electromigration of oxygen ion under the bipolar electric filed can explain the switching behavior. Formation of ultrathin AlO_x at the interface can guarantee excellent retention characteristics at 125 °C Compared with the large area (50 × 50 um2) memory cell, the nanoscale device (φ=50 nm) showed better memory performance such as faster switching speed, better uniformity, endurance, and retention characteristics.

Original language	English
Title of host publication	2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
Pages	5.4.1-5.4.4
DOIs	https://doi.org/10.1109/IEDM.2009.5424410
State	Published - 2009
Event	2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States Duration: 7 Dec 2009 → 9 Dec 2009

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2009 International Electron Devices Meeting, IEDM 2009
Country/Territory	United States
City	Baltimore, MD
Period	7/12/09 → 9/12/09

Access to Document

10.1109/IEDM.2009.5424410

Cite this

Seong, D. J., Park, J., Lee, N., Hasan, M., Jung, S., Choi, H., Lee, J., Jo, M., Lee, W., Park, S., Kim, S., Jang, Y. H., Lee, Y., Sung, M., Kil, D., Hwang, Y., Chung, S., Hong, S., Roh, J., & Hwang, H. (2009). Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr_0.7Ca _0.3MnO₃ device for nonvolatile memory applications. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest (pp. 5.4.1-5.4.4). Article 5424410 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2009.5424410

Seong, Dong Jun ; Park, Jubong ; Lee, Nodo et al. / Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr_0.7Ca _0.3MnO₃ device for nonvolatile memory applications. 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. pp. 5.4.1-5.4.4 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{b157421498454d7981fa6e2d7b2abe1d,

title = "Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7Ca 0.3MnO3 device for nonvolatile memory applications",

abstract = "An in-depth study on the resistive switching mechanism of perovskite oxide based device was performed. Compared with filament type resistive switching device, excellent switching uniformity was obtained due to controlled redox reaction at metal/oxide interface. Electromigration of oxygen ion under the bipolar electric filed can explain the switching behavior. Formation of ultrathin AlOx at the interface can guarantee excellent retention characteristics at 125 °C Compared with the large area (50 × 50 um2) memory cell, the nanoscale device (φ=50 nm) showed better memory performance such as faster switching speed, better uniformity, endurance, and retention characteristics.",

author = "Seong, \{Dong Jun\} and Jubong Park and Nodo Lee and Musarrat Hasan and Seungjae Jung and Hyejung Choi and Joonmyoung Lee and Minseok Jo and Wootae Lee and Sangsu Park and Seonghyun Kim and Jang, \{Yun Hee\} and Y. Lee and M. Sung and D. Kil and Y. Hwang and S. Chung and S. Hong and J. Roh and Hyunsang Hwang",

year = "2009",

doi = "10.1109/IEDM.2009.5424410",

language = "English",

isbn = "9781424456406",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "5.4.1--5.4.4",

booktitle = "2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest",

note = "2009 International Electron Devices Meeting, IEDM 2009 ; Conference date: 07-12-2009 Through 09-12-2009",

}

Seong, DJ, Park, J, Lee, N, Hasan, M, Jung, S, Choi, H, Lee, J, Jo, M, Lee, W, Park, S, Kim, S, Jang, YH, Lee, Y, Sung, M, Kil, D, Hwang, Y, Chung, S, Hong, S, Roh, J & Hwang, H 2009, Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr_0.7Ca _0.3MnO₃ device for nonvolatile memory applications. in 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest., 5424410, Technical Digest - International Electron Devices Meeting, IEDM, pp. 5.4.1-5.4.4, 2009 International Electron Devices Meeting, IEDM 2009, Baltimore, MD, United States, 7/12/09. https://doi.org/10.1109/IEDM.2009.5424410

Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr_0.7Ca _0.3MnO₃ device for nonvolatile memory applications. / Seong, Dong Jun; Park, Jubong; Lee, Nodo et al.
2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. p. 5.4.1-5.4.4 5424410 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7Ca 0.3MnO3 device for nonvolatile memory applications

AU - Seong, Dong Jun

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AU - Lee, Nodo

AU - Hasan, Musarrat

AU - Jung, Seungjae

AU - Choi, Hyejung

AU - Lee, Joonmyoung

AU - Jo, Minseok

AU - Lee, Wootae

AU - Park, Sangsu

AU - Kim, Seonghyun

AU - Jang, Yun Hee

AU - Lee, Y.

AU - Sung, M.

AU - Kil, D.

AU - Hwang, Y.

AU - Chung, S.

AU - Hong, S.

AU - Roh, J.

AU - Hwang, Hyunsang

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N2 - An in-depth study on the resistive switching mechanism of perovskite oxide based device was performed. Compared with filament type resistive switching device, excellent switching uniformity was obtained due to controlled redox reaction at metal/oxide interface. Electromigration of oxygen ion under the bipolar electric filed can explain the switching behavior. Formation of ultrathin AlOx at the interface can guarantee excellent retention characteristics at 125 °C Compared with the large area (50 × 50 um2) memory cell, the nanoscale device (φ=50 nm) showed better memory performance such as faster switching speed, better uniformity, endurance, and retention characteristics.

AB - An in-depth study on the resistive switching mechanism of perovskite oxide based device was performed. Compared with filament type resistive switching device, excellent switching uniformity was obtained due to controlled redox reaction at metal/oxide interface. Electromigration of oxygen ion under the bipolar electric filed can explain the switching behavior. Formation of ultrathin AlOx at the interface can guarantee excellent retention characteristics at 125 °C Compared with the large area (50 × 50 um2) memory cell, the nanoscale device (φ=50 nm) showed better memory performance such as faster switching speed, better uniformity, endurance, and retention characteristics.

UR - https://www.scopus.com/pages/publications/77952357834

U2 - 10.1109/IEDM.2009.5424410

DO - 10.1109/IEDM.2009.5424410

M3 - Conference contribution

AN - SCOPUS:77952357834

SN - 9781424456406

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 5.4.1-5.4.4

BT - 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest

T2 - 2009 International Electron Devices Meeting, IEDM 2009

Y2 - 7 December 2009 through 9 December 2009

ER -

Seong DJ, Park J, Lee N, Hasan M, Jung S, Choi H et al. Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr_0.7Ca _0.3MnO₃ device for nonvolatile memory applications. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. p. 5.4.1-5.4.4. 5424410. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2009.5424410