TY - GEN
T1 - Effect of O2 partial pressure on magnetic properties of alloys CoFe-rich nacocrystalline thin films
AU - Tho, L. V.
AU - Lee, K. E.
AU - Kim, C. G.
AU - Kim, C. O.
AU - Cho, W. S.
PY - 2007
Y1 - 2007
N2 - Alloys of CoFe-rich magnetic films are well known as typical soft magnetic alloys. They are used for many kinds of electric and electronic parts such as magnetic recording heads, transformers and inductors. In order to get superior soft magnetic properties of the CoFe-based nanocrystalline thin films, the effect of O2 partial pressure on magnetic properties of Co-Fe-Hf-O nanocrystalline thin films have been investigated. It is found that the soft magnetic properties and electrical property of these films show a dependence on the partial pressure of reactive gases, which presumably changes the microstructure of the films and related magnetic anisotropy. With optimal conditions, thin film exhibit excellent soft magnetic properties: saturation magnetization (4πAs) of 21 kG, magnetic coercivity (Hc) of 0.18 Oe, anisotropy field (Hk) of 49 Oe, and an electrical property is also shown to be as high as 300 μΩcm. The combination of high 4πMs and relatively high Hk in these films are believed to be partly responsible for the excellent ultra-high-frequency behavior.
AB - Alloys of CoFe-rich magnetic films are well known as typical soft magnetic alloys. They are used for many kinds of electric and electronic parts such as magnetic recording heads, transformers and inductors. In order to get superior soft magnetic properties of the CoFe-based nanocrystalline thin films, the effect of O2 partial pressure on magnetic properties of Co-Fe-Hf-O nanocrystalline thin films have been investigated. It is found that the soft magnetic properties and electrical property of these films show a dependence on the partial pressure of reactive gases, which presumably changes the microstructure of the films and related magnetic anisotropy. With optimal conditions, thin film exhibit excellent soft magnetic properties: saturation magnetization (4πAs) of 21 kG, magnetic coercivity (Hc) of 0.18 Oe, anisotropy field (Hk) of 49 Oe, and an electrical property is also shown to be as high as 300 μΩcm. The combination of high 4πMs and relatively high Hk in these films are believed to be partly responsible for the excellent ultra-high-frequency behavior.
KW - Electrical property
KW - Excellent soft magnetic properties
KW - Ultra-high-frequency
UR - http://www.scopus.com/inward/record.url?scp=38349187974&partnerID=8YFLogxK
U2 - 10.4028/0-87849-443-x.1367
DO - 10.4028/0-87849-443-x.1367
M3 - Conference contribution
AN - SCOPUS:38349187974
SN - 087849443X
SN - 9780878494439
T3 - Materials Science Forum
SP - 1367
EP - 1370
BT - Recrystallization and Grain Growth III - Proceedings of the Third International Conference on Recrystallization and Grain Growth, ReX and GG III
PB - Trans Tech Publications Ltd
T2 - 3rd International Conference on Recrystallization and Grain Growth, ReX GG III
Y2 - 10 June 2007 through 15 June 2007
ER -