Abstract
Postfabrication rapid thermal annealing (RTA) and subsequent nitrous oxide (N2 O) plasma treatment improved the performance of zinc oxide (ZnO) thin-film transistors (TFTs) in terms of off current and on/off current ratio by almost 2 orders of magnitude. The off current of 2× 10-8 A and on/off current ratio of 3× 103 obtained after RTA were improved to 10-10 A and 105, respectively, by the subsequent N2 O plasma treatment. X-ray photoelectron spectroscopy analysis of the TFT samples showed that the RTA-treated ZnO surface had more oxygen vacancies as compared to as-deposited samples, and the oxygen vacancies at the surface of RTA-treated ZnO were reduced by subsequent N2 O plasma treatment. The reduction of oxygen vacancies at the top region of the ZnO channel is the cause of better off current and on/off current ratio of the TFTs.
| Original language | English |
|---|---|
| Pages (from-to) | H55-H59 |
| Journal | Electrochemical and Solid-State Letters |
| Volume | 11 |
| Issue number | 3 |
| DOIs | |
| State | Published - 2008 |
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