Effect of injection current density on electroluminescence in silicon quantum dot light-emitting diodes

Baek Hyun Kim; Robert F. Davis; Chang Hee Cho; Seong Ju Park

doi:10.1063/1.3248025

Effect of injection current density on electroluminescence in silicon quantum dot light-emitting diodes

Baek Hyun Kim, Robert F. Davis, Chang Hee Cho, Seong Ju Park

Department of Physics and Chemistry

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We report the effect of injection current density on the electroluminescence (EL) from silicon quantum dot (QD) light-emitting diodes. The EL spectra as a function of injection current density were blueshifted and broad. These results are attributed to both the increase in the contribution of small Si QDs in the silicon nitride film due to the increase in the injection current density and the recombination of electron-hole pairs between excited states in the Si QDs due to band bending under high bias.

Original language	English
Article number	153103
Journal	Applied Physics Letters
Volume	95
Issue number	15
DOIs	https://doi.org/10.1063/1.3248025
State	Published - 2009

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title = "Effect of injection current density on electroluminescence in silicon quantum dot light-emitting diodes",

abstract = "We report the effect of injection current density on the electroluminescence (EL) from silicon quantum dot (QD) light-emitting diodes. The EL spectra as a function of injection current density were blueshifted and broad. These results are attributed to both the increase in the contribution of small Si QDs in the silicon nitride film due to the increase in the injection current density and the recombination of electron-hole pairs between excited states in the Si QDs due to band bending under high bias.",

author = "Kim, {Baek Hyun} and Davis, {Robert F.} and Cho, {Chang Hee} and Park, {Seong Ju}",

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AU - Kim, Baek Hyun

AU - Davis, Robert F.

AU - Cho, Chang Hee

AU - Park, Seong Ju

PY - 2009

Y1 - 2009

N2 - We report the effect of injection current density on the electroluminescence (EL) from silicon quantum dot (QD) light-emitting diodes. The EL spectra as a function of injection current density were blueshifted and broad. These results are attributed to both the increase in the contribution of small Si QDs in the silicon nitride film due to the increase in the injection current density and the recombination of electron-hole pairs between excited states in the Si QDs due to band bending under high bias.

AB - We report the effect of injection current density on the electroluminescence (EL) from silicon quantum dot (QD) light-emitting diodes. The EL spectra as a function of injection current density were blueshifted and broad. These results are attributed to both the increase in the contribution of small Si QDs in the silicon nitride film due to the increase in the injection current density and the recombination of electron-hole pairs between excited states in the Si QDs due to band bending under high bias.

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DO - 10.1063/1.3248025

M3 - Article

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VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

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Effect of injection current density on electroluminescence in silicon quantum dot light-emitting diodes

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