Abstract
The effect of hydrogen passivation on the charge storage characteristics of two types of silicon nitride films containing silicon quantum dots (Si QDs) grown by Si H4 + N2 and Si H4 +N H3 plasma was investigated. The transmission electron microscope analysis and the capacitance-voltage measurement showed that the silicon nitride film grown by Si H4 +N H3 plasma has a lower interface trap density and a higher density of Si QDs compared to that grown by Si H4 + N2 plasma. It was also found that the charge retention characteristics in the Si QDs were greatly enhanced in the samples grown by means of Si H4 +N H3 plasma, due to the hydrogen passivation of the defects in the silicon nitride films by N H3 during the growth of the Si QDs.
| Original language | English |
|---|---|
| Article number | 143107 |
| Pages (from-to) | 1-3 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 86 |
| Issue number | 14 |
| DOIs | |
| State | Published - 4 Apr 2005 |
Bibliographical note
Funding Information:This work was supported by the National Research Laboratory Program on Nanophotonic Semiconductors and the Nano Structure Technology Project of the Ministry of Science and Technology in Korea.