Effect of annealing temperature and ambient gas on phosphorus doped p-type ZnO

Dae Kue Hwang; Min Suk Oh; Jae Hong Lim; Chang Goo Kang; Seong Ju Park

doi:10.1063/1.2430937

Effect of annealing temperature and ambient gas on phosphorus doped p-type ZnO

Dae Kue Hwang, Min Suk Oh, Jae Hong Lim, Chang Goo Kang, Seong Ju Park

Division of Energy Techonology

Gwangju Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

69 Scopus citations

Abstract

The authors report on the thermal activation of phosphorus doped p -type ZnO thin films grown by radio frequency magnetron sputtering. The p -type ZnO was produced by activating phosphorus doped ZnO thin films in N2, Ar, or O2 ambients. The hole concentration of the p -type ZnO, prepared in an O2 ambient, showed a lower hole concentration compared to samples annealed in N2 and Ar ambients. The activation energies of the phosphorus dopant in the p -type ZnO under different ambient gases indicate that phosphorus atoms replace oxygen atoms in the ZnO to form PO which acts as an acceptor.

Original language	English
Article number	021106
Journal	Applied Physics Letters
Volume	90
Issue number	2
DOIs	https://doi.org/10.1063/1.2430937
State	Published - 2007

Bibliographical note

Funding Information:
This work was partially supported by the Ministry of Science and Technology through the National Research Laboratory Program in Korea, GTI (GIST Technology Initiative), and AOARD (Asian Office of Aerospace Research and Development).

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title = "Effect of annealing temperature and ambient gas on phosphorus doped p-type ZnO",

abstract = "The authors report on the thermal activation of phosphorus doped p -type ZnO thin films grown by radio frequency magnetron sputtering. The p -type ZnO was produced by activating phosphorus doped ZnO thin films in N2, Ar, or O2 ambients. The hole concentration of the p -type ZnO, prepared in an O2 ambient, showed a lower hole concentration compared to samples annealed in N2 and Ar ambients. The activation energies of the phosphorus dopant in the p -type ZnO under different ambient gases indicate that phosphorus atoms replace oxygen atoms in the ZnO to form PO which acts as an acceptor.",

author = "Hwang, {Dae Kue} and Oh, {Min Suk} and Lim, {Jae Hong} and Kang, {Chang Goo} and Park, {Seong Ju}",

note = "Funding Information: This work was partially supported by the Ministry of Science and Technology through the National Research Laboratory Program in Korea, GTI (GIST Technology Initiative), and AOARD (Asian Office of Aerospace Research and Development).",

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T1 - Effect of annealing temperature and ambient gas on phosphorus doped p-type ZnO

AU - Hwang, Dae Kue

AU - Oh, Min Suk

AU - Lim, Jae Hong

AU - Kang, Chang Goo

AU - Park, Seong Ju

N1 - Funding Information: This work was partially supported by the Ministry of Science and Technology through the National Research Laboratory Program in Korea, GTI (GIST Technology Initiative), and AOARD (Asian Office of Aerospace Research and Development).

PY - 2007

Y1 - 2007

N2 - The authors report on the thermal activation of phosphorus doped p -type ZnO thin films grown by radio frequency magnetron sputtering. The p -type ZnO was produced by activating phosphorus doped ZnO thin films in N2, Ar, or O2 ambients. The hole concentration of the p -type ZnO, prepared in an O2 ambient, showed a lower hole concentration compared to samples annealed in N2 and Ar ambients. The activation energies of the phosphorus dopant in the p -type ZnO under different ambient gases indicate that phosphorus atoms replace oxygen atoms in the ZnO to form PO which acts as an acceptor.

AB - The authors report on the thermal activation of phosphorus doped p -type ZnO thin films grown by radio frequency magnetron sputtering. The p -type ZnO was produced by activating phosphorus doped ZnO thin films in N2, Ar, or O2 ambients. The hole concentration of the p -type ZnO, prepared in an O2 ambient, showed a lower hole concentration compared to samples annealed in N2 and Ar ambients. The activation energies of the phosphorus dopant in the p -type ZnO under different ambient gases indicate that phosphorus atoms replace oxygen atoms in the ZnO to form PO which acts as an acceptor.

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DO - 10.1063/1.2430937

M3 - Article

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SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 021106

ER -

Effect of annealing temperature and ambient gas on phosphorus doped p-type ZnO

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