Dry thermal oxidation of a graded SiGe layer

Y. S. Lim; J. S. Jeong; J. Y. Lee; H. S. Kim; H. K. Shon; H. K. Kim; D. W. Moon

doi:10.1063/1.1415373

Dry thermal oxidation of a graded SiGe layer

Y. S. Lim, J. S. Jeong, J. Y. Lee, H. S. Kim, H. K. Shon, H. K. Kim, D. W. Moon

Department of New Biology

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Original language	English
Pages (from-to)	3606
Number of pages	1
Journal	Applied Physics Letters
Volume	79
Issue number	22
DOIs	https://doi.org/10.1063/1.1415373
State	Published - 26 Nov 2001

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title = "Dry thermal oxidation of a graded SiGe layer",

author = "Lim, {Y. S.} and Jeong, {J. S.} and Lee, {J. Y.} and Kim, {H. S.} and Shon, {H. K.} and Kim, {H. K.} and Moon, {D. W.}",

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AU - Lim, Y. S.

AU - Jeong, J. S.

AU - Lee, J. Y.

AU - Kim, H. S.

AU - Shon, H. K.

AU - Kim, H. K.

AU - Moon, D. W.

PY - 2001/11/26

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Dry thermal oxidation of a graded SiGe layer

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