Abstract
We report directional single mode emission in an InGaAsP semiconductor microcavity laser, which is composed of a circle and an isosceles trapezoid. When exciting a whole cavity, the laser generates a single mode without hopping in two directions over a wide range of continuous injection currents. In the emission spectrum, it is confirmed from the equidistant mode spacing that a scar mode becomes a single lasing mode above the lasing threshold. A numerical analysis of the boundary element method shows that the far-field pattern of the resonance agrees well with that of the experiment.
| Original language | English |
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| Pages (from-to) | 13651-13656 |
| Number of pages | 6 |
| Journal | Optics Express |
| Volume | 20 |
| Issue number | 13 |
| DOIs | |
| State | Published - 18 Jun 2012 |