Directed self-assembly of block copolymers for next generation nanolithography

Directed self-assembly of block copolymers has received a great deal of research attention as a promising nanolithography to complement the intrinsic limitations of conventional photolithography. In this review, we highlight the recent progress in the development of the directed self-assembly process for practical utilization in semiconductor applications. Various advanced directed self-assembly approaches are examined, in which block copolymer self-assembly is synergistically integrated with conventional photolithography, such as ArF lithography or I-line lithography, via either epitaxial self-assembly or the graphoepitaxy principle. We focus on the practical advantages anticipated from directed self-assembly integration, such as pattern density multiplication, feature size uniformity improvement, line edge roughness reduction, as well as cost reduction. Additionally, a direction for future research on directed self-assembly is suggested with diverse potential applications.