Direct monitoring of generated particles in plasma enhanced chemical vapor deposition process using temperature compensating quartz crystal microbalance

The growing demand for high-density integrated circuits (ICs) necessitates robust contaminant particle monitoring systems to optimize yield management. This research introduces a quartz crystal microbalance (QCM) based monitoring system for particle generation during the plasma-enhanced chemical vapor deposition (PECVD) process. The sensor can be integrated at the foreline, thereby eliminating the need for additional sampling apparatuses. To extend the operational lifetime of the QCM, a novel bypass piping system with an orifice plate has been developed, improving its longevity by a remarkable 1800 times compared to conventional single-pipe configurations. In addition, the proposed sensor incorporates an integrated platinum-based resistance temperature detector (RTD) that corrects sensing inaccuracies arising from temperature variations during processing. This temperature compensation strategy ensures accurate and reliable particle measurements, particularly under high-temperature conditions. The efficacy of the proposed system has been experimentally validated during the PECVD of SiO₂, showcasing its significant promise for improving ICs yield management.