Direct measurements of strain depth profiles in Ge/Si(001) nanostructures

D. W. Moon; H. I. Lee; B. Cho; Y. L. Foo; T. Spila; S. Hong; J. E. Greene

doi:10.1063/1.1635074

Direct measurements of strain depth profiles in Ge/Si(001) nanostructures

D. W. Moon, H. I. Lee, B. Cho, Y. L. Foo, T. Spila, S. Hong, J. E. Greene

Department of New Biology

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Strain depth profiles of Ge islands were directly measured on Si(001) using medium-energy ion scattering spectroscopy (MEIS) measurements. Significant changes were observed in the strain profile as the islands transform from pyramidal to dome-shaped with increasing Ge layer thickness. 5.5-monolayer (ML)-thick Ge layers whose surfaces are composed of square pyramids with an average size of 17.7-nm and an aspect ratio of 0.08, exhibited a uniform compressive strain of 2.1%. The results show that strain relaxation is intimately related to the pyramid-to-dome island shape transformation.

Original language	English
Pages (from-to)	5298-5300
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	25
DOIs	https://doi.org/10.1063/1.1635074
State	Published - 22 Dec 2003

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@article{2d15afa1245d43b8972dcc5090b63762,

title = "Direct measurements of strain depth profiles in Ge/Si(001) nanostructures",

abstract = "Strain depth profiles of Ge islands were directly measured on Si(001) using medium-energy ion scattering spectroscopy (MEIS) measurements. Significant changes were observed in the strain profile as the islands transform from pyramidal to dome-shaped with increasing Ge layer thickness. 5.5-monolayer (ML)-thick Ge layers whose surfaces are composed of square pyramids with an average size of 17.7-nm and an aspect ratio of 0.08, exhibited a uniform compressive strain of 2.1%. The results show that strain relaxation is intimately related to the pyramid-to-dome island shape transformation.",

author = "Moon, {D. W.} and Lee, {H. I.} and B. Cho and Foo, {Y. L.} and T. Spila and S. Hong and Greene, {J. E.}",

year = "2003",

month = dec,

day = "22",

doi = "10.1063/1.1635074",

language = "English",

volume = "83",

pages = "5298--5300",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

}

TY - JOUR

T1 - Direct measurements of strain depth profiles in Ge/Si(001) nanostructures

AU - Moon, D. W.

AU - Lee, H. I.

AU - Cho, B.

AU - Foo, Y. L.

AU - Spila, T.

AU - Hong, S.

AU - Greene, J. E.

PY - 2003/12/22

Y1 - 2003/12/22

N2 - Strain depth profiles of Ge islands were directly measured on Si(001) using medium-energy ion scattering spectroscopy (MEIS) measurements. Significant changes were observed in the strain profile as the islands transform from pyramidal to dome-shaped with increasing Ge layer thickness. 5.5-monolayer (ML)-thick Ge layers whose surfaces are composed of square pyramids with an average size of 17.7-nm and an aspect ratio of 0.08, exhibited a uniform compressive strain of 2.1%. The results show that strain relaxation is intimately related to the pyramid-to-dome island shape transformation.

AB - Strain depth profiles of Ge islands were directly measured on Si(001) using medium-energy ion scattering spectroscopy (MEIS) measurements. Significant changes were observed in the strain profile as the islands transform from pyramidal to dome-shaped with increasing Ge layer thickness. 5.5-monolayer (ML)-thick Ge layers whose surfaces are composed of square pyramids with an average size of 17.7-nm and an aspect ratio of 0.08, exhibited a uniform compressive strain of 2.1%. The results show that strain relaxation is intimately related to the pyramid-to-dome island shape transformation.

UR - http://www.scopus.com/inward/record.url?scp=0942299444&partnerID=8YFLogxK

U2 - 10.1063/1.1635074

DO - 10.1063/1.1635074

M3 - Article

AN - SCOPUS:0942299444

SN - 0003-6951

VL - 83

SP - 5298

EP - 5300

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Direct measurements of strain depth profiles in Ge/Si(001) nanostructures

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