TY - JOUR
T1 - Direct in Situ Conversion of Metals into Metal-Organic Frameworks
T2 - A Strategy for the Rapid Growth of MOF Films on Metal Substrates
AU - Ji, Hoon
AU - Hwang, Sunhyun
AU - Kim, Keonmok
AU - Kim, Cheolgi
AU - Jeong, Nak Cheon
N1 - Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/11/30
Y1 - 2016/11/30
N2 - The fabrication of metal-organic framework (MOF) films on conducting substrates has demonstrated great potential in applications such as electronic conduction and sensing. For these applications, direct contact of the film to the conducting substrate without a self-assembled monolayer (SAM) is a desired step that must be achieved prior to the use of MOF films. In this report, we propose an in situ strategy for the rapid one-step conversion of Cu metal into HKUST-1 films on conducting Cu substrates. The Cu substrate acts both as a conducting substrate and a source of Cu2+ ions during the synthesis of HKUST-1. This synthesis is possible because of the simultaneous reaction of an oxidizing agent and a deprotonating agent, in which the former agent dissolves the metal substrate to form Cu2+ ions while the latter agent deprotonates the ligand. Using this strategy, the HKUST-1 film could not only be rapidly synthesized within 5 min but also be directly attached to the Cu substrate. Based on microscopic studies, we propose a plausible mechanism for the growth reaction. Furthermore, we show the versatility of this in situ conversion methodology, applying it to ZIF-8, which comprises Zn2+ ions and imidazole-based ligands. Using an I2-filled HKUST-1 film, we further demonstrate that the direct contact of the MOF film to the conducting substrate makes the material more suitable for use as a sensor or electronic conductor.
AB - The fabrication of metal-organic framework (MOF) films on conducting substrates has demonstrated great potential in applications such as electronic conduction and sensing. For these applications, direct contact of the film to the conducting substrate without a self-assembled monolayer (SAM) is a desired step that must be achieved prior to the use of MOF films. In this report, we propose an in situ strategy for the rapid one-step conversion of Cu metal into HKUST-1 films on conducting Cu substrates. The Cu substrate acts both as a conducting substrate and a source of Cu2+ ions during the synthesis of HKUST-1. This synthesis is possible because of the simultaneous reaction of an oxidizing agent and a deprotonating agent, in which the former agent dissolves the metal substrate to form Cu2+ ions while the latter agent deprotonates the ligand. Using this strategy, the HKUST-1 film could not only be rapidly synthesized within 5 min but also be directly attached to the Cu substrate. Based on microscopic studies, we propose a plausible mechanism for the growth reaction. Furthermore, we show the versatility of this in situ conversion methodology, applying it to ZIF-8, which comprises Zn2+ ions and imidazole-based ligands. Using an I2-filled HKUST-1 film, we further demonstrate that the direct contact of the MOF film to the conducting substrate makes the material more suitable for use as a sensor or electronic conductor.
KW - MOF films
KW - acid-base chemistry
KW - conductivities
KW - in situ syntheses
KW - metal-organic frameworks
UR - http://www.scopus.com/inward/record.url?scp=84999862755&partnerID=8YFLogxK
U2 - 10.1021/acsami.6b12755
DO - 10.1021/acsami.6b12755
M3 - Article
AN - SCOPUS:84999862755
SN - 1944-8244
VL - 8
SP - 32414
EP - 32420
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 47
ER -