Diffusion studies on Si-PIN X-ray detectors with guard-rings for single photon counting sensors

Kisung Lee, J. C. Yoon, Young Jun Jung, Sungchae Jeon, Bonghoe Kim, Jin Young Kim

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

PIN diodes for digital X-ray detection as a single photon counting sensors were fabricated with a guard ring structure with p+ doping for reducing the leakage current. The efficiency of the guard ring was verified by significantly reduced leakage current compared to the Si-PIN diodes without guard ring structure and the gap distance between the active area and the guard ring was optimized as the leakage currents showed strong dependency on it. In this paper, secondary ion mass spectroscopy (SIMS) profile was measured and characterized to investigate potential process improvement. Since a large transient enhanced diffusion (TED) as the broadening of 200 nm at the tail is observed in the boron SIMS profile, it is suggested to reduce the annealing process time of RTA or to use spike annealing process. Also, in order to investigate the effect of reduced TED or other possible process to achieve shorter junction depth for improving device performance, it is in progress to fully optimize the process simulation incorporating the transient enhanced diffusion model of boron in Si.

Original languageEnglish
Title of host publicationHard X-Ray, Gamma-Ray, and Neutron Detector Physics XII
DOIs
StatePublished - 2010
EventHard X-Ray, Gamma-Ray, and Neutron Detector Physics XII - San Diego, CA, United States
Duration: 2 Aug 20104 Aug 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7805
ISSN (Print)0277-786X

Conference

ConferenceHard X-Ray, Gamma-Ray, and Neutron Detector Physics XII
Country/TerritoryUnited States
CitySan Diego, CA
Period2/08/104/08/10

Keywords

  • Digital X-ray detection
  • guard-ring
  • leakage current
  • single photon counting sensor

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