Abstract
We have compared resistance switching of NiO films deposited on Pt and SrRuO3 (SRO): unipolar switching in Pt/NiO/Pt and bipolar switching in Pt/NiO/SRO. Linear fitted current-voltage curves and capacitance-voltage results show that on- and off-states conductions in unipolar switching are dominated by inductive Ohmic behavior and Poole-Frenkel effect, respectively. However, the conductions of on- and off-states in bipolar switching follow capacitive Ohmic behavior and Schottky effect, respectively. Therefore, we infer that the mechanisms of the unipolar and bipolar switching behaviors in NiO films are related with changes in bulk-limited filamentary conduction and interfacial Schottky barrier, respectively.
Original language | English |
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Article number | 022109 |
Journal | Applied Physics Letters |
Volume | 95 |
Issue number | 2 |
DOIs | |
State | Published - 2009 |
Bibliographical note
Funding Information:This work was supported by the Korea Research Foundation (Grant No. KRF-2007-314-C00093), KOSEF NRL Program grant funded by the Korea government MEST (Grant No. R0A-2008-000-20052-0), Nano R&D program through the KOSEF by MEST (Grant No. 2008-02557), “The National Research Program for 0.1-Terabit Nonvolatile Memory Development” sponsored by Korea Ministry of Knowledge Economy, WCU program through the KOSEF funded by the MEST (Grant No. R31-2008-000-10057-0), and KOSEF grant funded by the Korea MEST (Quantum Metamaterials Research Center, Grant No. R11-2008-053-03002-0).