Dielectric properties of highly oriented Pb 0.65Ba 0.35ZrO 3 Thin Films

J. S. Kim; J. S. Choi; J. H. Lee; S. H. Kim; S. H. Jeon; I. R. Hwang; B. H. Park; T. J. Choi; S. H. Shin; J. C. Lee; M. J. Lee; S. A. Seo; I. K. Yoo

Dielectric properties of highly oriented Pb _0.65Ba _0.35ZrO ₃ Thin Films

J. S. Kim
, J. S. Choi
, J. H. Lee
, S. H. Kim
, S. H. Jeon
, I. R. Hwang
, B. H. Park
, T. J. Choi
, S. H. Shin
, J. C. Lee
, M. J. Lee
, S. A. Seo
, I. K. Yoo

Division of Nanotechnology

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Pb _0.65Ba _0.35ZrO ₃ (PBZ) thin films [1] were grown on MgO (001) substrates by pulsed laser deposition (PLD), We compared the structural and dielectric properties of PBZ thin films grown at various temperatures. A high c-axis orientation appeared in PBZ thin film grown at a deposition temperature of 550°C. The c-axis-oriented PBZ thin film also showed the largest tunability among all the PBZ thin films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ thin film were 20 % and 0.00959, respectively. In addition, we compared the temperature coefficient of capacitance (TCC) of a PBZ thin film with that of a Ba _0.5Sr _0.5TiO ₃ (BST) thin film, which is a well-known material applicable to tunable microwave devices. We confirmed that the TCC value of a PBZ thin film was three times smaller than that of a BST thin film.

Original language	English
Pages (from-to)	S243-S246
Journal	Journal of the Korean Physical Society
Volume	47
Issue number	SUPPL. 2
State	Published - Sep 2005

Keywords

BST
Microwave tunable device
PBZ
Pulsed laser deposition
TCC
Tunability

Cite this

@article{77e9fc90181e4a28923bf12d1ae579ad,

title = "Dielectric properties of highly oriented Pb 0.65Ba 0.35ZrO 3 Thin Films",

abstract = "Pb 0.65Ba 0.35ZrO 3 (PBZ) thin films [1] were grown on MgO (001) substrates by pulsed laser deposition (PLD), We compared the structural and dielectric properties of PBZ thin films grown at various temperatures. A high c-axis orientation appeared in PBZ thin film grown at a deposition temperature of 550°C. The c-axis-oriented PBZ thin film also showed the largest tunability among all the PBZ thin films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ thin film were 20 \% and 0.00959, respectively. In addition, we compared the temperature coefficient of capacitance (TCC) of a PBZ thin film with that of a Ba 0.5Sr 0.5TiO 3 (BST) thin film, which is a well-known material applicable to tunable microwave devices. We confirmed that the TCC value of a PBZ thin film was three times smaller than that of a BST thin film.",

keywords = "BST, Microwave tunable device, PBZ, Pulsed laser deposition, TCC, Tunability",

author = "Kim, \{J. S.\} and Choi, \{J. S.\} and Lee, \{J. H.\} and Kim, \{S. H.\} and Jeon, \{S. H.\} and Hwang, \{I. R.\} and Park, \{B. H.\} and Choi, \{T. J.\} and Shin, \{S. H.\} and Lee, \{J. C.\} and Lee, \{M. J.\} and Seo, \{S. A.\} and Yoo, \{I. K.\}",

year = "2005",

month = sep,

language = "English",

volume = "47",

pages = "S243--S246",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "SUPPL. 2",

}

TY - JOUR

T1 - Dielectric properties of highly oriented Pb 0.65Ba 0.35ZrO 3 Thin Films

AU - Kim, J. S.

AU - Choi, J. S.

AU - Lee, J. H.

AU - Kim, S. H.

AU - Jeon, S. H.

AU - Hwang, I. R.

AU - Park, B. H.

AU - Choi, T. J.

AU - Shin, S. H.

AU - Lee, J. C.

AU - Lee, M. J.

AU - Seo, S. A.

AU - Yoo, I. K.

PY - 2005/9

Y1 - 2005/9

N2 - Pb 0.65Ba 0.35ZrO 3 (PBZ) thin films [1] were grown on MgO (001) substrates by pulsed laser deposition (PLD), We compared the structural and dielectric properties of PBZ thin films grown at various temperatures. A high c-axis orientation appeared in PBZ thin film grown at a deposition temperature of 550°C. The c-axis-oriented PBZ thin film also showed the largest tunability among all the PBZ thin films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ thin film were 20 % and 0.00959, respectively. In addition, we compared the temperature coefficient of capacitance (TCC) of a PBZ thin film with that of a Ba 0.5Sr 0.5TiO 3 (BST) thin film, which is a well-known material applicable to tunable microwave devices. We confirmed that the TCC value of a PBZ thin film was three times smaller than that of a BST thin film.

AB - Pb 0.65Ba 0.35ZrO 3 (PBZ) thin films [1] were grown on MgO (001) substrates by pulsed laser deposition (PLD), We compared the structural and dielectric properties of PBZ thin films grown at various temperatures. A high c-axis orientation appeared in PBZ thin film grown at a deposition temperature of 550°C. The c-axis-oriented PBZ thin film also showed the largest tunability among all the PBZ thin films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ thin film were 20 % and 0.00959, respectively. In addition, we compared the temperature coefficient of capacitance (TCC) of a PBZ thin film with that of a Ba 0.5Sr 0.5TiO 3 (BST) thin film, which is a well-known material applicable to tunable microwave devices. We confirmed that the TCC value of a PBZ thin film was three times smaller than that of a BST thin film.

KW - BST

KW - Microwave tunable device

KW - PBZ

KW - Pulsed laser deposition

KW - TCC

KW - Tunability

UR - https://www.scopus.com/pages/publications/27444441365

M3 - Article

AN - SCOPUS:27444441365

SN - 0374-4884

VL - 47

SP - S243-S246

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SUPPL. 2

ER -

Dielectric properties of highly oriented Pb _0.65Ba _0.35ZrO ₃ Thin Films

Abstract

Keywords

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