Development of ferromagnetism in the doped topological insulator Bi 2-x MnxTe3

  • Y. S. Hor
  • , P. Roushan
  • , H. Beidenkopf
  • , J. Seo
  • , D. Qu
  • , J. G. Checkelsky
  • , L. A. Wray
  • , D. Hsieh
  • , Y. Xia
  • , S. Y. Xu
  • , D. Qian
  • , M. Z. Hasan
  • , N. P. Ong
  • , A. Yazdani
  • , R. J. Cava

Research output: Contribution to journalArticlepeer-review

443 Scopus citations

Abstract

The development of ferromagnetism in Mn-doped Bi2Te3 is characterized through measurements on a series of single crystals with different Mn content. Scanning tunneling microscopy analysis shows that the Mn substitutes on the Bi sites, forming compounds of the type Bi 2-xMnxTe3, and that the Mn substitutions are randomly distributed, not clustered. Mn doping first gives rise to local magnetic moments with Curie-like behavior, but by the compositions Bi 1.96 Mn0.04 Te3 and Bi1.91 Mn 0.09 Te3, a second-order ferromagnetic transition is observed, with TC ∼9-12 K. The easy axis of magnetization in the ferromagnetic phase is perpendicular to the Bi2 Te3 basal plane. Thermoelectric power and Hall effect measurements show that the Mn-doped Bi2Te3 crystals are p -type. Angle-resolved photoemission spectroscopy measurements show that the topological surface states that are present in pristine Bi2 Te3 are also present at 15 K in ferromagnetic Mn-doped Bi2-x MnxTe3 and that the dispersion relations of the surface states are changed in a subtle fashion.

Original languageEnglish
Article number195203
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume81
Issue number19
DOIs
StatePublished - 6 May 2010

Fingerprint

Dive into the research topics of 'Development of ferromagnetism in the doped topological insulator Bi 2-x MnxTe3'. Together they form a unique fingerprint.

Cite this