Determination of rotatable anisotropy in exchange-biased bilayers using anisotropic magnetoresistance technique

J. K. Kim, S. W. Kim, K. A. Lee, B. K. Kim, J. H. Kim, S. S. Lee, D. G. Hwang, C. G. Kim, C. O. Kim

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

The determination of rotatable anisotropy in exchange-biased bilayers using anisotropic magnetoresistance (AMR) was discussed. A four-point terminal method was used to characterize the magnetic properties form the AMR magnetoresistance curves. Results proved that weak exchange coupling regions increased as the antiferromagnet thickness decreased.

Original languageEnglish
Pages (from-to)7714-7716
Number of pages3
JournalJournal of Applied Physics
Volume93
Issue number10 3
DOIs
StatePublished - 15 May 2003

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