Defect-induced degradation of rectification properties of aged Pt/ n-InxZn1-xOy Schottky diodes

K. H. Kim; B. S. Kang; M. J. Lee; S. E. Ahn; C. B. Lee; G. Stefanovich; W. X. Xianyu; K. K. Kim; J. S. Kim; I. K. Yoo; Y. Park

doi:10.1063/1.2942385

Defect-induced degradation of rectification properties of aged Pt/ n-In_xZn_1-xO_y Schottky diodes

K. H. Kim, B. S. Kang, M. J. Lee, S. E. Ahn, C. B. Lee, G. Stefanovich, W. X. Xianyu, K. K. Kim, J. S. Kim, I. K. Yoo, Y. Park

Division of Nanotechnology

Samsung

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

In this study, Pt/IZO (In_xZn_1-xO_y) Schottky diodes were fabricated and the degradation phenomenon was investigated. The Pt/IZO Schottky diodes showed a rectifying ratio of 105, however, the electrical properties were degraded with aging. An increase in defect and carrier concentrations was observed from capacitance-voltage analysis and photoluminescence in the aged Pt/IZO Schottky diode. The degradation of the rectifying properties of the aged diodes originates possibly from the electron tunneling due to the increased defect concentrations.

Original language	English
Article number	233507
Journal	Applied Physics Letters
Volume	92
Issue number	23
DOIs	https://doi.org/10.1063/1.2942385
State	Published - 2008

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@article{7ff6c82ff65a4ca89f69fd38996b36ea,

title = "Defect-induced degradation of rectification properties of aged Pt/ n-InxZn1-xOy Schottky diodes",

abstract = "In this study, Pt/IZO (InxZn1-xOy) Schottky diodes were fabricated and the degradation phenomenon was investigated. The Pt/IZO Schottky diodes showed a rectifying ratio of 105, however, the electrical properties were degraded with aging. An increase in defect and carrier concentrations was observed from capacitance-voltage analysis and photoluminescence in the aged Pt/IZO Schottky diode. The degradation of the rectifying properties of the aged diodes originates possibly from the electron tunneling due to the increased defect concentrations.",

author = "Kim, \{K. H.\} and Kang, \{B. S.\} and Lee, \{M. J.\} and Ahn, \{S. E.\} and Lee, \{C. B.\} and G. Stefanovich and Xianyu, \{W. X.\} and Kim, \{K. K.\} and Kim, \{J. S.\} and Yoo, \{I. K.\} and Y. Park",

year = "2008",

doi = "10.1063/1.2942385",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Defect-induced degradation of rectification properties of aged Pt/ n-InxZn1-xOy Schottky diodes

AU - Kim, K. H.

AU - Kang, B. S.

AU - Lee, M. J.

AU - Ahn, S. E.

AU - Lee, C. B.

AU - Stefanovich, G.

AU - Xianyu, W. X.

AU - Kim, K. K.

AU - Kim, J. S.

AU - Yoo, I. K.

AU - Park, Y.

PY - 2008

Y1 - 2008

N2 - In this study, Pt/IZO (InxZn1-xOy) Schottky diodes were fabricated and the degradation phenomenon was investigated. The Pt/IZO Schottky diodes showed a rectifying ratio of 105, however, the electrical properties were degraded with aging. An increase in defect and carrier concentrations was observed from capacitance-voltage analysis and photoluminescence in the aged Pt/IZO Schottky diode. The degradation of the rectifying properties of the aged diodes originates possibly from the electron tunneling due to the increased defect concentrations.

AB - In this study, Pt/IZO (InxZn1-xOy) Schottky diodes were fabricated and the degradation phenomenon was investigated. The Pt/IZO Schottky diodes showed a rectifying ratio of 105, however, the electrical properties were degraded with aging. An increase in defect and carrier concentrations was observed from capacitance-voltage analysis and photoluminescence in the aged Pt/IZO Schottky diode. The degradation of the rectifying properties of the aged diodes originates possibly from the electron tunneling due to the increased defect concentrations.

UR - https://www.scopus.com/pages/publications/45149092349

U2 - 10.1063/1.2942385

DO - 10.1063/1.2942385

M3 - Article

AN - SCOPUS:45149092349

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 233507

ER -

Defect-induced degradation of rectification properties of aged Pt/ n-In_xZn_1-xO_y Schottky diodes

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