Decrease in switching voltage fluctuation of PtNi Ox Pt structure by process control

Ranju Jung; Myoung Jae Lee; Sunae Seo; Dong Chirl Kim; Gyeong Su Park; Kihong Kim; Seungeon Ahn; Youngsoo Park; In Kyeong Yoo; Jin Soo Kim; Bae Ho Park

doi:10.1063/1.2755712

Decrease in switching voltage fluctuation of PtNi Ox Pt structure by process control

Ranju Jung, Myoung Jae Lee, Sunae Seo, Dong Chirl Kim, Gyeong Su Park, Kihong Kim, Seungeon Ahn, Youngsoo Park, In Kyeong Yoo, Jin Soo Kim, Bae Ho Park

Division of Nanotechnology

Research output: Contribution to journal › Article › peer-review

64 Scopus citations

Abstract

Resistance change random access memory devices using Ni Ox films with resistance switching properties have immense potential for high-density nonvolatile memory exceeding currently used flash memory. The only critical failure of a Ni Ox film is to write wrong information due to large fluctuations of switching voltages during successive resistance switching operations. The authors show that failure-free Ni Ox film can be grown directly on Pt electrode just by process control. Intensive analyses show that the superior resistance switching behaviors of their simple PtNi Ox Pt structure may result from a very thin Ni-Pt layer self-formed at the bottom interface during deposition of Ni Ox.

Original language	English
Article number	022112
Journal	Applied Physics Letters
Volume	91
Issue number	2
DOIs	https://doi.org/10.1063/1.2755712
State	Published - 2007

Bibliographical note

Funding Information:
One of the authors (B.H.P.) was supported by Konkuk University in 2003.

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title = "Decrease in switching voltage fluctuation of PtNi Ox Pt structure by process control",

abstract = "Resistance change random access memory devices using Ni Ox films with resistance switching properties have immense potential for high-density nonvolatile memory exceeding currently used flash memory. The only critical failure of a Ni Ox film is to write wrong information due to large fluctuations of switching voltages during successive resistance switching operations. The authors show that failure-free Ni Ox film can be grown directly on Pt electrode just by process control. Intensive analyses show that the superior resistance switching behaviors of their simple PtNi Ox Pt structure may result from a very thin Ni-Pt layer self-formed at the bottom interface during deposition of Ni Ox.",

author = "Ranju Jung and Lee, {Myoung Jae} and Sunae Seo and Kim, {Dong Chirl} and Park, {Gyeong Su} and Kihong Kim and Seungeon Ahn and Youngsoo Park and Yoo, {In Kyeong} and Kim, {Jin Soo} and Park, {Bae Ho}",

note = "Funding Information: One of the authors (B.H.P.) was supported by Konkuk University in 2003.",

year = "2007",

doi = "10.1063/1.2755712",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Decrease in switching voltage fluctuation of PtNi Ox Pt structure by process control

AU - Jung, Ranju

AU - Lee, Myoung Jae

AU - Seo, Sunae

AU - Kim, Dong Chirl

AU - Park, Gyeong Su

AU - Kim, Kihong

AU - Ahn, Seungeon

AU - Park, Youngsoo

AU - Yoo, In Kyeong

AU - Kim, Jin Soo

AU - Park, Bae Ho

N1 - Funding Information: One of the authors (B.H.P.) was supported by Konkuk University in 2003.

PY - 2007

Y1 - 2007

N2 - Resistance change random access memory devices using Ni Ox films with resistance switching properties have immense potential for high-density nonvolatile memory exceeding currently used flash memory. The only critical failure of a Ni Ox film is to write wrong information due to large fluctuations of switching voltages during successive resistance switching operations. The authors show that failure-free Ni Ox film can be grown directly on Pt electrode just by process control. Intensive analyses show that the superior resistance switching behaviors of their simple PtNi Ox Pt structure may result from a very thin Ni-Pt layer self-formed at the bottom interface during deposition of Ni Ox.

AB - Resistance change random access memory devices using Ni Ox films with resistance switching properties have immense potential for high-density nonvolatile memory exceeding currently used flash memory. The only critical failure of a Ni Ox film is to write wrong information due to large fluctuations of switching voltages during successive resistance switching operations. The authors show that failure-free Ni Ox film can be grown directly on Pt electrode just by process control. Intensive analyses show that the superior resistance switching behaviors of their simple PtNi Ox Pt structure may result from a very thin Ni-Pt layer self-formed at the bottom interface during deposition of Ni Ox.

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U2 - 10.1063/1.2755712

DO - 10.1063/1.2755712

M3 - Article

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SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 022112

ER -

Decrease in switching voltage fluctuation of PtNi Ox Pt structure by process control

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