CuSbS₂-sensitized inorganic-organic heterojunction solar cells fabricated using a Metal-thiourea complex solution

The device performance of sensitizer-architecture solar cells based on a CuSbS₂ light sensitizer is presented. The device consists of F-doped SnO₂ substrate/TiO₂ blocking layer/mesoporous TiO₂/CuSbS₂/hole-transporting material/Au electrode. The CuSbS₂ was deposited by repeated cycles of spin coating of a Cu-Sb-thiourea complex solution and thermal decomposition, followed by annealing in Ar at 500 C. Poly(2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b ]dithiophene)-alt-4,7(2,1,3-benzothiadiazole)) (PCPDTBT) was used as the hole-transporting material. The best-performing cell exhibited a 3.1 % device efficiency, with a short-circuit current density of 21.5 A cm^-2, an open-circuit voltage of 304 V, and a fill factor of 46.8 %.