Conversion from unipolar to bipolar resistance switching by inserting Ta2 O5layer in Pt/TaOx/Pt cells

H. K. Yoo; S. B. Lee; J. S. Lee; S. H. Chang; M. J. Yoon; Y. S. Kim; B. S. Kang; M. J. Lee; C. J. Kim; B. Kahng; T. W. Noh

doi:10.1063/1.3587809

Conversion from unipolar to bipolar resistance switching by inserting Ta₂ O₅layer in Pt/TaO_x/Pt cells

H. K. Yoo, S. B. Lee, J. S. Lee, S. H. Chang, M. J. Yoon, Y. S. Kim, B. S. Kang, M. J. Lee, C. J. Kim, B. Kahng, T. W. Noh

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Abstract

We observed unipolar resistance switching in Pt/ TaO_x /Pt cells. We could make the cell have the bipolar resistance switching by inserting a stoichiometric Ta₂ O₅layer between Pt and TaOx layers. Bipolar resistance switching in Pt/ Ta₂ O₅ / TaO _x /Pt cells occurred reliably without applying an external compliance current. With increase in the Ta₂ O₅ layer thickness, the current value at the low-resistance state became decreased but the forming voltage became increased. We could explain these intriguing phenomena using the interface-modified random circuit breaker network model.

Original language	English
Article number	183507
Journal	Applied Physics Letters
Volume	98
Issue number	18
DOIs	https://doi.org/10.1063/1.3587809
State	Published - 2 May 2011

Bibliographical note

Funding Information:
This research was supported by grants from the National Research Foundation of Korea funded by the Korean Ministry of Education, Science, and Technology [Grant Nos. 2009-0080567 and 2010-0020416, (B.K. and J.S.L.) 2010-0015066, and (B.S.K.) 2010-0011608].

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@article{f71ddf90fffb457dad579ce04b1c0757,

title = "Conversion from unipolar to bipolar resistance switching by inserting Ta2 O5layer in Pt/TaOx/Pt cells",

abstract = "We observed unipolar resistance switching in Pt/ TaOx /Pt cells. We could make the cell have the bipolar resistance switching by inserting a stoichiometric Ta2 O5layer between Pt and TaOx layers. Bipolar resistance switching in Pt/ Ta2 O5 / TaO x /Pt cells occurred reliably without applying an external compliance current. With increase in the Ta2 O5 layer thickness, the current value at the low-resistance state became decreased but the forming voltage became increased. We could explain these intriguing phenomena using the interface-modified random circuit breaker network model.",

author = "Yoo, {H. K.} and Lee, {S. B.} and Lee, {J. S.} and Chang, {S. H.} and Yoon, {M. J.} and Kim, {Y. S.} and Kang, {B. S.} and Lee, {M. J.} and Kim, {C. J.} and B. Kahng and Noh, {T. W.}",

note = "Funding Information: This research was supported by grants from the National Research Foundation of Korea funded by the Korean Ministry of Education, Science, and Technology [Grant Nos. 2009-0080567 and 2010-0020416, (B.K. and J.S.L.) 2010-0015066, and (B.S.K.) 2010-0011608].",

year = "2011",

month = may,

day = "2",

doi = "10.1063/1.3587809",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Conversion from unipolar to bipolar resistance switching by inserting Ta2 O5layer in Pt/TaOx/Pt cells

AU - Yoo, H. K.

AU - Lee, S. B.

AU - Lee, J. S.

AU - Chang, S. H.

AU - Yoon, M. J.

AU - Kim, Y. S.

AU - Kang, B. S.

AU - Lee, M. J.

AU - Kim, C. J.

AU - Kahng, B.

AU - Noh, T. W.

N1 - Funding Information: This research was supported by grants from the National Research Foundation of Korea funded by the Korean Ministry of Education, Science, and Technology [Grant Nos. 2009-0080567 and 2010-0020416, (B.K. and J.S.L.) 2010-0015066, and (B.S.K.) 2010-0011608].

PY - 2011/5/2

Y1 - 2011/5/2

N2 - We observed unipolar resistance switching in Pt/ TaOx /Pt cells. We could make the cell have the bipolar resistance switching by inserting a stoichiometric Ta2 O5layer between Pt and TaOx layers. Bipolar resistance switching in Pt/ Ta2 O5 / TaO x /Pt cells occurred reliably without applying an external compliance current. With increase in the Ta2 O5 layer thickness, the current value at the low-resistance state became decreased but the forming voltage became increased. We could explain these intriguing phenomena using the interface-modified random circuit breaker network model.

AB - We observed unipolar resistance switching in Pt/ TaOx /Pt cells. We could make the cell have the bipolar resistance switching by inserting a stoichiometric Ta2 O5layer between Pt and TaOx layers. Bipolar resistance switching in Pt/ Ta2 O5 / TaO x /Pt cells occurred reliably without applying an external compliance current. With increase in the Ta2 O5 layer thickness, the current value at the low-resistance state became decreased but the forming voltage became increased. We could explain these intriguing phenomena using the interface-modified random circuit breaker network model.

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U2 - 10.1063/1.3587809

DO - 10.1063/1.3587809

M3 - Article

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SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 183507

ER -

Conversion from unipolar to bipolar resistance switching by inserting Ta₂ O₅layer in Pt/TaO_x/Pt cells

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