Control of tunnel coupling strength between InAs quantum dots and nanogap metallic electrodes through In-Ga intermixing

K. Shibata; M. Jung; K. M. Cha; K. Hirakawa

doi:10.1016/j.physe.2009.10.004

Control of tunnel coupling strength between InAs quantum dots and nanogap metallic electrodes through In-Ga intermixing

K. Shibata, M. Jung, K. M. Cha, K. Hirakawa

Division of Nanotechnology

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We have investigated the growth-temperature, T_G, dependence of the electronic properties of single self-assembled InAs quantum dots (QDs) coupled to nanogap metallic electrodes. The orbital quantization energies of QDs and the tunnel resistances exhibited strong T_G-dependence due to In-Ga intermixing during QD formation. It was found that the transparency of the tunnel junctions is controllable over a very wide range by simply changing the size and the growth temperature of QDs. By realizing strong QD-electrodes coupling, very high Kondo temperature T_K∼80 K was observed in our InAs QD system.

Original language	English
Pages (from-to)	2595-2597
Number of pages	3
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	42
Issue number	10
DOIs	https://doi.org/10.1016/j.physe.2009.10.004
State	Published - Sep 2010

Bibliographical note

Funding Information:
We thank H. Sakaki and Y. Arakawa for continuous encouragement, and S. Ishida for technical support. This work was partly supported by the Japan Science and Technology Corporation (CREST), Grant-in-Aid from the Japan Society for Promotion of Science (No. 19560338 ), the research grants (the Mazda Foundation and the Iketani Foundation), and the Specially Coordinated Fund from MEXT (NanoQuine).

Keywords

InAs
Quantum dot
Single electron transistors

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10.1016/j.physe.2009.10.004

Cite this

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title = "Control of tunnel coupling strength between InAs quantum dots and nanogap metallic electrodes through In-Ga intermixing",

abstract = "We have investigated the growth-temperature, TG, dependence of the electronic properties of single self-assembled InAs quantum dots (QDs) coupled to nanogap metallic electrodes. The orbital quantization energies of QDs and the tunnel resistances exhibited strong TG-dependence due to In-Ga intermixing during QD formation. It was found that the transparency of the tunnel junctions is controllable over a very wide range by simply changing the size and the growth temperature of QDs. By realizing strong QD-electrodes coupling, very high Kondo temperature TK∼80 K was observed in our InAs QD system.",

keywords = "InAs, Quantum dot, Single electron transistors",

author = "K. Shibata and M. Jung and Cha, {K. M.} and K. Hirakawa",

note = "Funding Information: We thank H. Sakaki and Y. Arakawa for continuous encouragement, and S. Ishida for technical support. This work was partly supported by the Japan Science and Technology Corporation (CREST), Grant-in-Aid from the Japan Society for Promotion of Science (No. 19560338 ), the research grants (the Mazda Foundation and the Iketani Foundation), and the Specially Coordinated Fund from MEXT (NanoQuine).",

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doi = "10.1016/j.physe.2009.10.004",

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AU - Shibata, K.

AU - Jung, M.

AU - Cha, K. M.

AU - Hirakawa, K.

N1 - Funding Information: We thank H. Sakaki and Y. Arakawa for continuous encouragement, and S. Ishida for technical support. This work was partly supported by the Japan Science and Technology Corporation (CREST), Grant-in-Aid from the Japan Society for Promotion of Science (No. 19560338 ), the research grants (the Mazda Foundation and the Iketani Foundation), and the Specially Coordinated Fund from MEXT (NanoQuine).

PY - 2010/9

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N2 - We have investigated the growth-temperature, TG, dependence of the electronic properties of single self-assembled InAs quantum dots (QDs) coupled to nanogap metallic electrodes. The orbital quantization energies of QDs and the tunnel resistances exhibited strong TG-dependence due to In-Ga intermixing during QD formation. It was found that the transparency of the tunnel junctions is controllable over a very wide range by simply changing the size and the growth temperature of QDs. By realizing strong QD-electrodes coupling, very high Kondo temperature TK∼80 K was observed in our InAs QD system.

AB - We have investigated the growth-temperature, TG, dependence of the electronic properties of single self-assembled InAs quantum dots (QDs) coupled to nanogap metallic electrodes. The orbital quantization energies of QDs and the tunnel resistances exhibited strong TG-dependence due to In-Ga intermixing during QD formation. It was found that the transparency of the tunnel junctions is controllable over a very wide range by simply changing the size and the growth temperature of QDs. By realizing strong QD-electrodes coupling, very high Kondo temperature TK∼80 K was observed in our InAs QD system.

KW - InAs

KW - Quantum dot

KW - Single electron transistors

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U2 - 10.1016/j.physe.2009.10.004

DO - 10.1016/j.physe.2009.10.004

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JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 10

ER -

Control of tunnel coupling strength between InAs quantum dots and nanogap metallic electrodes through In-Ga intermixing

Abstract

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Keywords

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