Abstract
Al-doped ZnO (AZO) thin films were grown by atomic layer deposition (ALD) for use as transparent conductive oxides on high aspect ratio Si microrod arrays. The ALD-deposited AZO films showed high optical transmittance and electrical conductivity despite their polycrystalline structures and resulted in a superior conformal coating on the surface and side regions of the Si microrods. The films also exhibited an electrical performance identical to that of the AZO film on a flat Si substrate. These results revealed that ALD-deposited AZO films are promising candidates for electrodes in the next-generation optoelectronic devices based on low dimensional structures, which require conformal coating.
| Original language | English |
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| Pages (from-to) | K12-K14 |
| Journal | Electrochemical and Solid-State Letters |
| Volume | 13 |
| Issue number | 2 |
| DOIs | |
| State | Published - 2010 |