Abstract
Highly reactive and nanometer-sized (30-50 nm) Sn-doped BaTi4O9 (BaTi4-xSnxO9;x = 0.0-0.03) powders have been prepared by the citrate-precursor method. The effect of Sn substitution on the crystallization and microwave dielectric properties has also been investigated on the basis of microstructure and crystal structure. Addition of a small amount of SnO2 resulted in a lowering of the sintering temperature of BaTi4O9, and at 1250-1300°C for 2-5 h, dense compounds with a theoretical density up to 99% could be obtained. The Sn-doped BaTi4O9 materials were found to have excellent microwave dielectric properties with εr = 34-37, Q = 8300-8900 at 11 GHz and γf = 3.6-16.1 ppm/°C.
Original language | English |
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Pages (from-to) | 3197-3204 |
Number of pages | 8 |
Journal | Journal of the American Ceramic Society |
Volume | 81 |
Issue number | 12 |
DOIs | |
State | Published - Dec 1998 |