Characterization of electronic structure of silicon nanocrystals in silicon nitride by capacitance spectroscopy

Chang Hee Cho; Baek Hyun Kim; Sang Kyun Kim; Seong Ju Park

doi:10.1063/1.3431572

Characterization of electronic structure of silicon nanocrystals in silicon nitride by capacitance spectroscopy

Chang Hee Cho
, Baek Hyun Kim
, Sang Kyun Kim
, Seong Ju Park

Department of Physics and Chemistry

Gwangju Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The electronic structure of silicon nanocrystals embedded in a silicon nitride insulating film is identified by using a capacitance spectroscopy. The tunneling capacitor device, which is used in this study, consists of a tunneling silicon nitride, an array of silicon nanocrystals embedded in a silicon nitride film, and a blocking silicon nitride deposited on p -type (100) Si substrate. The absolute position of the lowest conduction and the highest valence levels of the silicon nanocrystal is revealed and the band-gap energy of silicon nanocrystals estimated by the capacitance spectroscopy agrees well with that measured by photoluminescence spectroscopy.

Original language	English
Article number	223110
Journal	Applied Physics Letters
Volume	96
Issue number	22
DOIs	https://doi.org/10.1063/1.3431572
State	Published - 31 May 2010

Bibliographical note

Funding Information:
We thank Professor Charles W. Tu (University of California, San Diego) for valuable discussions. This work was partially supported by the World Class University program at the Gwangju Institute of Science and Technology through a grant provided by the Ministry of Education, Science and Technology of Korea (Grant No. R31-2008-000-10026-0) and the Korea Science and Engineering Foundation NCRC grant funded by the Korea government (Grant No. R15-2008-006-02001-0).

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@article{f6c98c92af664236b73bfd21d070258e,

title = "Characterization of electronic structure of silicon nanocrystals in silicon nitride by capacitance spectroscopy",

abstract = "The electronic structure of silicon nanocrystals embedded in a silicon nitride insulating film is identified by using a capacitance spectroscopy. The tunneling capacitor device, which is used in this study, consists of a tunneling silicon nitride, an array of silicon nanocrystals embedded in a silicon nitride film, and a blocking silicon nitride deposited on p -type (100) Si substrate. The absolute position of the lowest conduction and the highest valence levels of the silicon nanocrystal is revealed and the band-gap energy of silicon nanocrystals estimated by the capacitance spectroscopy agrees well with that measured by photoluminescence spectroscopy.",

author = "Cho, \{Chang Hee\} and Kim, \{Baek Hyun\} and Kim, \{Sang Kyun\} and Park, \{Seong Ju\}",

note = "Funding Information: We thank Professor Charles W. Tu (University of California, San Diego) for valuable discussions. This work was partially supported by the World Class University program at the Gwangju Institute of Science and Technology through a grant provided by the Ministry of Education, Science and Technology of Korea (Grant No. R31-2008-000-10026-0) and the Korea Science and Engineering Foundation NCRC grant funded by the Korea government (Grant No. R15-2008-006-02001-0).",

year = "2010",

month = may,

day = "31",

doi = "10.1063/1.3431572",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

}

TY - JOUR

T1 - Characterization of electronic structure of silicon nanocrystals in silicon nitride by capacitance spectroscopy

AU - Cho, Chang Hee

AU - Kim, Baek Hyun

AU - Kim, Sang Kyun

AU - Park, Seong Ju

N1 - Funding Information: We thank Professor Charles W. Tu (University of California, San Diego) for valuable discussions. This work was partially supported by the World Class University program at the Gwangju Institute of Science and Technology through a grant provided by the Ministry of Education, Science and Technology of Korea (Grant No. R31-2008-000-10026-0) and the Korea Science and Engineering Foundation NCRC grant funded by the Korea government (Grant No. R15-2008-006-02001-0).

PY - 2010/5/31

Y1 - 2010/5/31

N2 - The electronic structure of silicon nanocrystals embedded in a silicon nitride insulating film is identified by using a capacitance spectroscopy. The tunneling capacitor device, which is used in this study, consists of a tunneling silicon nitride, an array of silicon nanocrystals embedded in a silicon nitride film, and a blocking silicon nitride deposited on p -type (100) Si substrate. The absolute position of the lowest conduction and the highest valence levels of the silicon nanocrystal is revealed and the band-gap energy of silicon nanocrystals estimated by the capacitance spectroscopy agrees well with that measured by photoluminescence spectroscopy.

AB - The electronic structure of silicon nanocrystals embedded in a silicon nitride insulating film is identified by using a capacitance spectroscopy. The tunneling capacitor device, which is used in this study, consists of a tunneling silicon nitride, an array of silicon nanocrystals embedded in a silicon nitride film, and a blocking silicon nitride deposited on p -type (100) Si substrate. The absolute position of the lowest conduction and the highest valence levels of the silicon nanocrystal is revealed and the band-gap energy of silicon nanocrystals estimated by the capacitance spectroscopy agrees well with that measured by photoluminescence spectroscopy.

UR - https://www.scopus.com/pages/publications/77953585577

U2 - 10.1063/1.3431572

DO - 10.1063/1.3431572

M3 - Article

AN - SCOPUS:77953585577

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 223110

ER -

Characterization of electronic structure of silicon nanocrystals in silicon nitride by capacitance spectroscopy

Abstract

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