Abstract
We have characterized Zn1-xCoxO thin films grown on sapphire (0001) substrates by pulsed laser deposition. We have found for x = 0.25 that inhomogeneous Zn1-xCoxO films with wurtzite ZnO phase mixed with rock-salt CoO and hexagonal Co phases are formed when the growth temperature (Tg) is relatively high (≳600 °C) and the O2 pressure (PO2) is fairly low (≲10-5 torr). The presence of the Co clusters leads to room temperature ferromagnetism. Homogeneous Zn1-xCoxO alloy films with wurtzite structure are predominantly paramagnetic. High-quality epitaxial Zn1-xCoxO alloy films are formed at a growth condition of Tg = 600 °C and PO2 = 10-5 torr. Under this optimized growth condition, Co can be dissolved into ZnO up to around 40%. Photoluminescence spectra and electrical properties of Zn1-xCoxO strongly depend on the Co content.
Original language | English |
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Pages (from-to) | 2880-2882 |
Number of pages | 3 |
Journal | IEEE Transactions on Magnetics |
Volume | 38 |
Issue number | 5 I |
DOIs | |
State | Published - Sep 2002 |
Event | 2002 International Magnetics Conference (Intermag 2002) - Amsterdam, Netherlands Duration: 28 Apr 2002 → 2 May 2002 |
Bibliographical note
Funding Information:Manuscript received February 14, 2002; revised April 5, 2002. This work was supported by the National Program for Tera-level Nanodevices of the MOST as one of the 21 Century Frontier Programs and by the KOSEF through the Research Center for Advanced Magnetic Materials.
Keywords
- Diluted magnetic semiconductors
- Pulsed laser deposition
- Spin electronics
- ZnCoO