Characteristics and modeling of a nonplanar nonrectangular metal oxide semiconductor field effect transistor for charge sensing in the Si micro-fluidic channel

Geunbae Lim, Dong Sun Kim, Hong Kun Lyu, Hey Jung Park, Jang Kyoo Shin, Pyung Choi, Jong Hyun Lee, Minho Lee

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

In this work, a nonplanar, nonrectangular metal-oxide-semiconductor field effect transistor (MOSFET) with an asymmetrical channel structure for sensing charge in the Si micro-fluidic channel was fabricated, and the electrical characteristics of the fabricated three-dimensional (3-D) MOSFET were measured. The device was formed in the convex corner of a Si micro-fluidic channel using tetramethyl ammonium hydroxide (TMAH) anistropic etching solution, so that it would be suitable for combination with a micro-fluidic system. We approximated the nonplanar, nonrectangular 3-D MOSFET to a two-dimensional rectangular structure using the Schwartz-Christoffel transformation. The LEVEL1 device parameters of the 3-D MOSFET were extracted from the measured electrical device characteristics and were used in a simulation program with integrated circuit emphasis (SPICE) simulation. The measured and simulated results for the 3-D MOSFET were compared and found to show good agreement. We also investigated the feasibility of the proposed 3-D MOSFET as a charge sensor for detecting charged biomolecules.

Original languageEnglish
Pages (from-to)3896-3900
Number of pages5
JournalJapanese Journal of Applied Physics
Volume43
Issue number6 B
DOIs
StatePublished - Jun 2004

Keywords

  • 3-D MOSFET
  • Charge sensor
  • Schwartz-Christoffel transformation
  • Si micro-fluidic channel

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