Characteristics and modeling of a non-planar and non-rectangular MOSFET for charge sensing in the Si micro-fluidic channel

Hong Kun Lyu; Dong Sun Kim; Hey Jung Park; Hwan Mok Jung; Jang Kyoo Shin; Pyung Choi; Jong Hyun Lee; Minho Lee; Geunbae Lim

doi:10.1109/IMNC.2003.1268637

Characteristics and modeling of a non-planar and non-rectangular MOSFET for charge sensing in the Si micro-fluidic channel

Hong Kun Lyu, Dong Sun Kim, Hey Jung Park, Hwan Mok Jung, Jang Kyoo Shin, Pyung Choi, Jong Hyun Lee, Minho Lee, Geunbae Lim

Division of Electronics & Information System

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, a non-planar and non-rectangular MOSFET having asymmetrical channel structure has been modeled based on Schwartz-Christoffel transformation and electrical characteristics of the fabricated 3D MOSFET were measured.

Original language	English
Title of host publication	Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	186-187
Number of pages	2
ISBN (Electronic)	4891140402, 9784891140403
DOIs	https://doi.org/10.1109/IMNC.2003.1268637
State	Published - 2003
Event	International Microprocesses and Nanotechnology Conference, MNC 2003 - Tokyo, Japan Duration: 29 Oct 2003 → 31 Oct 2003

Publication series

Name	Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003

Conference

Conference	International Microprocesses and Nanotechnology Conference, MNC 2003
Country/Territory	Japan
City	Tokyo
Period	29/10/03 → 31/10/03

Bibliographical note

Publisher Copyright:
© 2003 Japan Soc. of Applied.

Access to Document

10.1109/IMNC.2003.1268637

Cite this

Lyu, H. K., Kim, D. S., Park, H. J., Jung, H. M., Shin, J. K., Choi, P., Lee, J. H., Lee, M., & Lim, G. (2003). Characteristics and modeling of a non-planar and non-rectangular MOSFET for charge sensing in the Si micro-fluidic channel. In Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003 (pp. 186-187). Article 1268637 (Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2003.1268637

Lyu, Hong Kun ; Kim, Dong Sun ; Park, Hey Jung et al. / Characteristics and modeling of a non-planar and non-rectangular MOSFET for charge sensing in the Si micro-fluidic channel. Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 186-187 (Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003).

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title = "Characteristics and modeling of a non-planar and non-rectangular MOSFET for charge sensing in the Si micro-fluidic channel",

abstract = "In this paper, a non-planar and non-rectangular MOSFET having asymmetrical channel structure has been modeled based on Schwartz-Christoffel transformation and electrical characteristics of the fabricated 3D MOSFET were measured.",

author = "Lyu, \{Hong Kun\} and Kim, \{Dong Sun\} and Park, \{Hey Jung\} and Jung, \{Hwan Mok\} and Shin, \{Jang Kyoo\} and Pyung Choi and Lee, \{Jong Hyun\} and Minho Lee and Geunbae Lim",

note = "Publisher Copyright: {\textcopyright} 2003 Japan Soc. of Applied.; International Microprocesses and Nanotechnology Conference, MNC 2003 ; Conference date: 29-10-2003 Through 31-10-2003",

year = "2003",

doi = "10.1109/IMNC.2003.1268637",

language = "English",

series = "Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "186--187",

booktitle = "Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003",

}

Lyu, HK, Kim, DS, Park, HJ, Jung, HM, Shin, JK, Choi, P, Lee, JH, Lee, M & Lim, G 2003, Characteristics and modeling of a non-planar and non-rectangular MOSFET for charge sensing in the Si micro-fluidic channel. in Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003., 1268637, Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003, Institute of Electrical and Electronics Engineers Inc., pp. 186-187, International Microprocesses and Nanotechnology Conference, MNC 2003, Tokyo, Japan, 29/10/03. https://doi.org/10.1109/IMNC.2003.1268637

Characteristics and modeling of a non-planar and non-rectangular MOSFET for charge sensing in the Si micro-fluidic channel. / Lyu, Hong Kun; Kim, Dong Sun; Park, Hey Jung et al.
Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 186-187 1268637 (Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Characteristics and modeling of a non-planar and non-rectangular MOSFET for charge sensing in the Si micro-fluidic channel

AU - Lyu, Hong Kun

AU - Kim, Dong Sun

AU - Park, Hey Jung

AU - Jung, Hwan Mok

AU - Shin, Jang Kyoo

AU - Choi, Pyung

AU - Lee, Jong Hyun

AU - Lee, Minho

AU - Lim, Geunbae

PY - 2003

Y1 - 2003

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AB - In this paper, a non-planar and non-rectangular MOSFET having asymmetrical channel structure has been modeled based on Schwartz-Christoffel transformation and electrical characteristics of the fabricated 3D MOSFET were measured.

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DO - 10.1109/IMNC.2003.1268637

M3 - Conference contribution

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T3 - Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003

SP - 186

EP - 187

BT - Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Microprocesses and Nanotechnology Conference, MNC 2003

Y2 - 29 October 2003 through 31 October 2003

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Lyu HK, Kim DS, Park HJ, Jung HM, Shin JK, Choi P et al. Characteristics and modeling of a non-planar and non-rectangular MOSFET for charge sensing in the Si micro-fluidic channel. In Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 186-187. 1268637. (Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003). doi: 10.1109/IMNC.2003.1268637

Characteristics and modeling of a non-planar and non-rectangular MOSFET for charge sensing in the Si micro-fluidic channel

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