Carbon nanotube electron emitters with a gated structure using backside exposure processes

Deuk Seok Chung; S. H. Park; H. W. Lee; J. H. Choi; S. N. Cha; J. W. Kim; J. E. Jang; K. W. Min; S. H. Cho; M. J. Yoon; J. S. Lee; C. K. Lee; J. H. Yoo; Jong Min Kim; J. E. Jung; Y. W. Jin; Y. J. Park; J. B. You

doi:10.1063/1.1480104

Carbon nanotube electron emitters with a gated structure using backside exposure processes

Deuk Seok Chung, S. H. Park, H. W. Lee, J. H. Choi, S. N. Cha, J. W. Kim, J. E. Jang, K. W. Min, S. H. Cho, M. J. Yoon, J. S. Lee, C. K. Lee, J. H. Yoo, Jong Min Kim, J. E. Jung, Y. W. Jin, Y. J. Park, J. B. You

Department of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

180 Scopus citations

Abstract

We have fabricated fully vacuum-sealed 5 in. diagonal carbon nanotube field-emission displays of a gated structure with reliable electron emission characteristics. Single-walled carbon nanotube tips were implemented into the gate structure using self-aligned backside exposure of photosensitive carbon nanotube paste. An onset gate electrode voltage for emission was about 60 V and the luminance as high as 510cd/m² was exhibited under an application of 100 V and 1.5 kV to gate electrode and anode, respectively.

Original language	English
Pages (from-to)	4045-4047
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	21
DOIs	https://doi.org/10.1063/1.1480104
State	Published - 27 May 2002

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Chung, D. S., Park, S. H., Lee, H. W., Choi, J. H., Cha, S. N., Kim, J. W., Jang, J. E., Min, K. W., Cho, S. H., Yoon, M. J., Lee, J. S., Lee, C. K., Yoo, J. H., Kim, J. M., Jung, J. E., Jin, Y. W., Park, Y. J., & You, J. B. (2002). Carbon nanotube electron emitters with a gated structure using backside exposure processes. Applied Physics Letters, 80(21), 4045-4047. https://doi.org/10.1063/1.1480104

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title = "Carbon nanotube electron emitters with a gated structure using backside exposure processes",

abstract = "We have fabricated fully vacuum-sealed 5 in. diagonal carbon nanotube field-emission displays of a gated structure with reliable electron emission characteristics. Single-walled carbon nanotube tips were implemented into the gate structure using self-aligned backside exposure of photosensitive carbon nanotube paste. An onset gate electrode voltage for emission was about 60 V and the luminance as high as 510cd/m2 was exhibited under an application of 100 V and 1.5 kV to gate electrode and anode, respectively.",

author = "Chung, \{Deuk Seok\} and Park, \{S. H.\} and Lee, \{H. W.\} and Choi, \{J. H.\} and Cha, \{S. N.\} and Kim, \{J. W.\} and Jang, \{J. E.\} and Min, \{K. W.\} and Cho, \{S. H.\} and Yoon, \{M. J.\} and Lee, \{J. S.\} and Lee, \{C. K.\} and Yoo, \{J. H.\} and Kim, \{Jong Min\} and Jung, \{J. E.\} and Jin, \{Y. W.\} and Park, \{Y. J.\} and You, \{J. B.\}",

year = "2002",

month = may,

day = "27",

doi = "10.1063/1.1480104",

language = "English",

volume = "80",

pages = "4045--4047",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Carbon nanotube electron emitters with a gated structure using backside exposure processes

AU - Chung, Deuk Seok

AU - Park, S. H.

AU - Lee, H. W.

AU - Choi, J. H.

AU - Cha, S. N.

AU - Kim, J. W.

AU - Jang, J. E.

AU - Min, K. W.

AU - Cho, S. H.

AU - Yoon, M. J.

AU - Lee, J. S.

AU - Lee, C. K.

AU - Yoo, J. H.

AU - Kim, Jong Min

AU - Jung, J. E.

AU - Jin, Y. W.

AU - Park, Y. J.

AU - You, J. B.

PY - 2002/5/27

Y1 - 2002/5/27

N2 - We have fabricated fully vacuum-sealed 5 in. diagonal carbon nanotube field-emission displays of a gated structure with reliable electron emission characteristics. Single-walled carbon nanotube tips were implemented into the gate structure using self-aligned backside exposure of photosensitive carbon nanotube paste. An onset gate electrode voltage for emission was about 60 V and the luminance as high as 510cd/m2 was exhibited under an application of 100 V and 1.5 kV to gate electrode and anode, respectively.

AB - We have fabricated fully vacuum-sealed 5 in. diagonal carbon nanotube field-emission displays of a gated structure with reliable electron emission characteristics. Single-walled carbon nanotube tips were implemented into the gate structure using self-aligned backside exposure of photosensitive carbon nanotube paste. An onset gate electrode voltage for emission was about 60 V and the luminance as high as 510cd/m2 was exhibited under an application of 100 V and 1.5 kV to gate electrode and anode, respectively.

UR - https://www.scopus.com/pages/publications/79956023354

U2 - 10.1063/1.1480104

DO - 10.1063/1.1480104

M3 - Article

AN - SCOPUS:79956023354

SN - 0003-6951

VL - 80

SP - 4045

EP - 4047

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Carbon nanotube electron emitters with a gated structure using backside exposure processes

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