Block copolymer multiple patterning integrated with conventional ArF lithography

Seung Hak Park; Dong Ok Shin; Bong Hoon Kim; Dong Ki Yoon; Kyoungseon Kim; Si Yong Lee; Seok Hwan Oh; Seong Woon Choi; Sang Chul Jeon; Sang Ouk Kim

doi:10.1039/b913853f

Block copolymer multiple patterning integrated with conventional ArF lithography

Seung Hak Park, Dong Ok Shin, Bong Hoon Kim, Dong Ki Yoon, Kyoungseon Kim, Si Yong Lee, Seok Hwan Oh, Seong Woon Choi, Sang Chul Jeon, Sang Ouk Kim

Department of Robotics and Mechatronics Engineering

Research output: Contribution to journal › Article › peer-review

69 Scopus citations

Abstract

We present block copolymer multiple patterning as an efficient and truly scalable nanolithography for sub-20 nm scale patterning, synergistically integrated with conventional ArF lithography. The directed assembly of block copolymers on chemically patterned substrates prepared by ArF lithography generated linear vertical cylinder arrays with a 20 to 30 nm diameter, enhancing the pattern density of the underlying chemical patterns by a factor of two or three. This self-assembled resolution enhancement technique affords a straightforward route to highly ordered sub-20 nm scale features via conventional lithography.

Original language	English
Pages (from-to)	120-125
Number of pages	6
Journal	Soft Matter
Volume	6
Issue number	1
DOIs	https://doi.org/10.1039/b913853f
State	Published - 2009

Access to Document

10.1039/b913853f

Cite this

@article{782f44b9ebe54f86901a5a44b7242515,

title = "Block copolymer multiple patterning integrated with conventional ArF lithography",

abstract = "We present block copolymer multiple patterning as an efficient and truly scalable nanolithography for sub-20 nm scale patterning, synergistically integrated with conventional ArF lithography. The directed assembly of block copolymers on chemically patterned substrates prepared by ArF lithography generated linear vertical cylinder arrays with a 20 to 30 nm diameter, enhancing the pattern density of the underlying chemical patterns by a factor of two or three. This self-assembled resolution enhancement technique affords a straightforward route to highly ordered sub-20 nm scale features via conventional lithography.",

author = "Park, \{Seung Hak\} and Shin, \{Dong Ok\} and Kim, \{Bong Hoon\} and Yoon, \{Dong Ki\} and Kyoungseon Kim and Lee, \{Si Yong\} and Oh, \{Seok Hwan\} and Choi, \{Seong Woon\} and Jeon, \{Sang Chul\} and Kim, \{Sang Ouk\}",

year = "2009",

doi = "10.1039/b913853f",

language = "English",

volume = "6",

pages = "120--125",

journal = "Soft Matter",

issn = "1744-683X",

publisher = "Royal Society of Chemistry",

number = "1",

}

TY - JOUR

T1 - Block copolymer multiple patterning integrated with conventional ArF lithography

AU - Park, Seung Hak

AU - Shin, Dong Ok

AU - Kim, Bong Hoon

AU - Yoon, Dong Ki

AU - Kim, Kyoungseon

AU - Lee, Si Yong

AU - Oh, Seok Hwan

AU - Choi, Seong Woon

AU - Jeon, Sang Chul

AU - Kim, Sang Ouk

PY - 2009

Y1 - 2009

N2 - We present block copolymer multiple patterning as an efficient and truly scalable nanolithography for sub-20 nm scale patterning, synergistically integrated with conventional ArF lithography. The directed assembly of block copolymers on chemically patterned substrates prepared by ArF lithography generated linear vertical cylinder arrays with a 20 to 30 nm diameter, enhancing the pattern density of the underlying chemical patterns by a factor of two or three. This self-assembled resolution enhancement technique affords a straightforward route to highly ordered sub-20 nm scale features via conventional lithography.

AB - We present block copolymer multiple patterning as an efficient and truly scalable nanolithography for sub-20 nm scale patterning, synergistically integrated with conventional ArF lithography. The directed assembly of block copolymers on chemically patterned substrates prepared by ArF lithography generated linear vertical cylinder arrays with a 20 to 30 nm diameter, enhancing the pattern density of the underlying chemical patterns by a factor of two or three. This self-assembled resolution enhancement technique affords a straightforward route to highly ordered sub-20 nm scale features via conventional lithography.

UR - https://www.scopus.com/pages/publications/72949122991

U2 - 10.1039/b913853f

DO - 10.1039/b913853f

M3 - Article

AN - SCOPUS:72949122991

SN - 1744-683X

VL - 6

SP - 120

EP - 125

JO - Soft Matter

JF - Soft Matter

IS - 1

ER -

Block copolymer multiple patterning integrated with conventional ArF lithography

Abstract

Access to Document

Other files and links

Fingerprint

Cite this