Bismuth ion-implanted solid-phase epitaxially grown shallow junction for metal-oxide-semiconductor field-effect transistors

A shallow, low-resistive solid phase epitaxially regrown n+ p junction was investigated for sub-70 nm metal-oxide-semiconductor field-effect transistors (MOSFETs), using bismuth (Bi) ion-implantation and low temperature rapid thermal annealing. Bi-doped specimens showed a shallow junction depth of ∼15 nm (at a background concentration of 5× 1018 cm-3), low sheet resistance, and leakage current at low temperature processing (700 °C). The results indicated that Bi could be a proper dopant for low temperature activated source and drain extensions that are fabricated at low temperatures with the implementation of high- κ dielectric and metal-electrode gate stacks in next generation MOSFETs.