Abstract
Resistive switching behavior-based memory devices are considered promising candidates for next-generation data storage because of their simple structure configuration, low power consumption, and rapid operating speed. Here, the resistive switching nonvolatile memory properties of Fe 2 O 3 nanocomposite (NC) films prepared from the thermal calcination of layer-by-layer (LbL) assembled ferritin multilayers were successfully investigated. For this study, negatively charged ferritin nanoparticles were alternately deposited onto the Pt-coated Si substrate with positively charged poly(allylamine hydrochloride) (PAH) by solution-based electrostatic LbL assembly, and the formed multilayers were thermally calcinated to obtain a homogeneous transition metal oxide NC film through the elimination of organic components, including the protein shell of ferritin. The formed memory device exhibits a stable ON/OFF current ratio of approximately 10 3 , with nanosecond switching times under an applied external bias. In addition, these reversible switching properties were kept stable during the repeated cycling tests of above 200 cycles and a test period of approximately 10 5 s under atmosphere. These solution-based approaches can provide a basis for large-area inorganic nanoparticle-based electric devices through the design of bio-nanomaterials at the molecular level.
Original language | English |
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Pages (from-to) | 36-43 |
Number of pages | 8 |
Journal | Applied Surface Science |
Volume | 368 |
DOIs | |
State | Published - 15 Apr 2016 |
Bibliographical note
Publisher Copyright:© 2016 Elsevier B.V. All rights reserved.
Keywords
- Electrostatic layer-by-layer assembly
- Fe O nanocomposite
- Multilayers
- Nonvolatile memory
- Thermal calcination