Bias-voltage-controlled interlayer exchange coupling

Chun Yeol You; S. D. Bader

doi:10.1109/20.801049

Bias-voltage-controlled interlayer exchange coupling

Chun Yeol You
, S. D. Bader

Department of Physics and Chemistry

Argonne National Laboratory

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We propose a new system whose magnetization direction can be controlled by an applied bias voltage without an external magnetic field. The system consists of a four layered structure F₁/S/I/F₂ (F₁ F₂: ferromagnets, S: spacer, I: insulator). An analytic expression for bias-voltage-controlled interlayer exchange coupling in this system is developed within a simple free-electron-like, one-dimensional approximation. According to the approach, the magnetic configurations of the two magnetic layers oscillate from antiferromagnetic to ferromagnetic with applied bias voltage. This implies that we can switch/rotate the magnetization direction without an external magnetic field. Possible applications of such a system are also discussed.

Original language	English
Pages (from-to)	2967-2969
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	35
Issue number	5 PART 1
DOIs	https://doi.org/10.1109/20.801049
State	Published - 1999

Bibliographical note

Funding Information:
Manuscript received March 5, 1999. c-Y.Y OU, 630-252-5534, fax 630-252-9595, pyou@a nl.gov. This work supported by the U.S. Department of Energy Division of Basic Energy Science-Material Science under contract No. W-31-109-ENG-38. 0018-9464/99$10.00 0 1999 IEEE

Keywords

Bias voltage
Controllable interlayer exchange coupling
Magnetization direction, quantum well
Tunneling

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10.1109/20.801049

Cite this

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title = "Bias-voltage-controlled interlayer exchange coupling",

abstract = "We propose a new system whose magnetization direction can be controlled by an applied bias voltage without an external magnetic field. The system consists of a four layered structure F1/S/I/F2 (F1 F2: ferromagnets, S: spacer, I: insulator). An analytic expression for bias-voltage-controlled interlayer exchange coupling in this system is developed within a simple free-electron-like, one-dimensional approximation. According to the approach, the magnetic configurations of the two magnetic layers oscillate from antiferromagnetic to ferromagnetic with applied bias voltage. This implies that we can switch/rotate the magnetization direction without an external magnetic field. Possible applications of such a system are also discussed.",

keywords = "Bias voltage, Controllable interlayer exchange coupling, Magnetization direction, quantum well, Tunneling",

author = "You, \{Chun Yeol\} and Bader, \{S. D.\}",

note = "Funding Information: Manuscript received March 5, 1999. c-Y.Y OU, 630-252-5534, fax 630-252-9595, pyou@a nl.gov. This work supported by the U.S. Department of Energy Division of Basic Energy Science-Material Science under contract No. W-31-109-ENG-38. 0018-9464/99\$10.00 0 1999 IEEE",

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doi = "10.1109/20.801049",

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T1 - Bias-voltage-controlled interlayer exchange coupling

AU - You, Chun Yeol

AU - Bader, S. D.

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PY - 1999

Y1 - 1999

N2 - We propose a new system whose magnetization direction can be controlled by an applied bias voltage without an external magnetic field. The system consists of a four layered structure F1/S/I/F2 (F1 F2: ferromagnets, S: spacer, I: insulator). An analytic expression for bias-voltage-controlled interlayer exchange coupling in this system is developed within a simple free-electron-like, one-dimensional approximation. According to the approach, the magnetic configurations of the two magnetic layers oscillate from antiferromagnetic to ferromagnetic with applied bias voltage. This implies that we can switch/rotate the magnetization direction without an external magnetic field. Possible applications of such a system are also discussed.

AB - We propose a new system whose magnetization direction can be controlled by an applied bias voltage without an external magnetic field. The system consists of a four layered structure F1/S/I/F2 (F1 F2: ferromagnets, S: spacer, I: insulator). An analytic expression for bias-voltage-controlled interlayer exchange coupling in this system is developed within a simple free-electron-like, one-dimensional approximation. According to the approach, the magnetic configurations of the two magnetic layers oscillate from antiferromagnetic to ferromagnetic with applied bias voltage. This implies that we can switch/rotate the magnetization direction without an external magnetic field. Possible applications of such a system are also discussed.

KW - Bias voltage

KW - Controllable interlayer exchange coupling

KW - Magnetization direction, quantum well

KW - Tunneling

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U2 - 10.1109/20.801049

DO - 10.1109/20.801049

M3 - Article

AN - SCOPUS:0033184296

SN - 0018-9464

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EP - 2969

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 5 PART 1

ER -

Bias-voltage-controlled interlayer exchange coupling

Abstract

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Keywords

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