Azimuthal Charge Redistribution of Hemi-Cylindrical Vertical NAND Flash Memory

Ji Ho Uhm; Jin Ho Chang; Joonggyu Kim; Eunmee Kwon; Woo Young Choi

doi:10.1109/LED.2023.3265986

Azimuthal Charge Redistribution of Hemi-Cylindrical Vertical NAND Flash Memory

Ji Ho Uhm
, Jin Ho Chang
, Joonggyu Kim
, Eunmee Kwon
, Woo Young Choi

Department of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The reliability issues of the hemi-cylindrical (HC) vertical NAND (VNAND) flash memory are investigated with various channel hole remaining ratios (CHRRs). Unlike conventional VNAND cells, carriers are nonuniformly injected to the charge-trapping layer in the case of HC VNAND during program/erase operations. Hence, in addition to conventional lateral migration, a novel charge redistribution mechanism - -azimuthal redistribution (AR) - -is proposed. The simulation and experimental results indicate that AR is a major component of the data retention as a function of the CHRR of HC VNAND cells.

Original language	English
Pages (from-to)	931-934
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	44
Issue number	6
DOIs	https://doi.org/10.1109/LED.2023.3265986
State	Published - 1 Jun 2023

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

Hemi-cylindrical vertical NAND (HC VNAND)
azimuthal redistribution (AR)
channel hole remaining ratio (CHRR)
data retention

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10.1109/LED.2023.3265986

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title = "Azimuthal Charge Redistribution of Hemi-Cylindrical Vertical NAND Flash Memory",

abstract = "The reliability issues of the hemi-cylindrical (HC) vertical NAND (VNAND) flash memory are investigated with various channel hole remaining ratios (CHRRs). Unlike conventional VNAND cells, carriers are nonuniformly injected to the charge-trapping layer in the case of HC VNAND during program/erase operations. Hence, in addition to conventional lateral migration, a novel charge redistribution mechanism - -azimuthal redistribution (AR) - -is proposed. The simulation and experimental results indicate that AR is a major component of the data retention as a function of the CHRR of HC VNAND cells.",

keywords = "Hemi-cylindrical vertical NAND (HC VNAND), azimuthal redistribution (AR), channel hole remaining ratio (CHRR), data retention",

author = "Uhm, \{Ji Ho\} and Chang, \{Jin Ho\} and Joonggyu Kim and Eunmee Kwon and Choi, \{Woo Young\}",

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doi = "10.1109/LED.2023.3265986",

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AU - Uhm, Ji Ho

AU - Chang, Jin Ho

AU - Kim, Joonggyu

AU - Kwon, Eunmee

AU - Choi, Woo Young

PY - 2023/6/1

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N2 - The reliability issues of the hemi-cylindrical (HC) vertical NAND (VNAND) flash memory are investigated with various channel hole remaining ratios (CHRRs). Unlike conventional VNAND cells, carriers are nonuniformly injected to the charge-trapping layer in the case of HC VNAND during program/erase operations. Hence, in addition to conventional lateral migration, a novel charge redistribution mechanism - -azimuthal redistribution (AR) - -is proposed. The simulation and experimental results indicate that AR is a major component of the data retention as a function of the CHRR of HC VNAND cells.

AB - The reliability issues of the hemi-cylindrical (HC) vertical NAND (VNAND) flash memory are investigated with various channel hole remaining ratios (CHRRs). Unlike conventional VNAND cells, carriers are nonuniformly injected to the charge-trapping layer in the case of HC VNAND during program/erase operations. Hence, in addition to conventional lateral migration, a novel charge redistribution mechanism - -azimuthal redistribution (AR) - -is proposed. The simulation and experimental results indicate that AR is a major component of the data retention as a function of the CHRR of HC VNAND cells.

KW - Hemi-cylindrical vertical NAND (HC VNAND)

KW - azimuthal redistribution (AR)

KW - channel hole remaining ratio (CHRR)

KW - data retention

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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Azimuthal Charge Redistribution of Hemi-Cylindrical Vertical NAND Flash Memory

Abstract

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Keywords

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