@inproceedings{3beba0e5f0da4296886b641c2dfd354f,
title = "Asymmetric tunneling metal-insulator-metal diode for high frequency application",
abstract = "To rectify high frequency AC bias, the characteristics and the structure of asymmetric tunneling metal-insulator-metal (MIM) diode has been studied. Needle like nanometer level electrode structure makes a high probability of electron tunneling due to high electrical field density on the electrode structure. The result enhances the asymmetric characteristic of current-voltage at negative to positive bias sweep, which induces a low leakage current level and a high rectifying efficiency.",
author = "Shin, {Jeong Hee} and Jaehan Im and Shin, {Sang Sik} and Inho Choi and Choi, {Ji Woong} and Jang, {Jae Eun}",
year = "2012",
doi = "10.1109/IRMMW-THz.2012.6380215",
language = "English",
isbn = "9781467315975",
series = "International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz",
booktitle = "IRMMW-THz 2012 - 37th International Conference on Infrared, Millimeter, and Terahertz Waves",
note = "37th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2012 ; Conference date: 23-09-2012 Through 28-09-2012",
}