Antimony as a proper candidate for low-temperature solid phase epitaxially activated n⁺/p junctions

Shallow, low-resistive n⁺/p junction was investigated for sub 100 nm metal oxide semiconductor field effect transistors (MOSFETs) using antimony and arsenic ion-implantation and low-temperature rapid thermal annealing. In contrast to As implanted junctions, Sb-doped specimens showed shallower junction depth, lower sheet resistance, and leakage current at low-temperature processing (600°C). The results indicated the superiority of antimony to arsenic as a proper dopant for low-temperature activated ultrashallow and low resistive source and drain extensions. Arsenic will not be a proper candidate because of higher sheet resistance, as a consequence of presence of inactive As-vacancy clusters, and higher leakage current for devices that should be fabricated at low temperature with implemention of high-K dielectric metal-electrode gate stacks in next generation MOSFETs.