Anomalous effect due to oxygen vacancy accumulation below the electrode in bipolar resistance switching Pt/Nb:SrTiO3 cells

Shinbuhm Lee; Jae Sung Lee; Jong Bong Park; Yong Koo Kyoung; Myoung Jae Lee; Tae Won Noh

doi:10.1063/1.4884215

Anomalous effect due to oxygen vacancy accumulation below the electrode in bipolar resistance switching Pt/Nb:SrTiO₃ cells

Shinbuhm Lee, Jae Sung Lee, Jong Bong Park, Yong Koo Kyoung, Myoung Jae Lee, Tae Won Noh

Research output: Contribution to journal › Article › peer-review

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Abstract

In conventional semiconductor theory, greater doping decreases the electronic resistance of a semiconductor. For the bipolar resistance switching (BRS) phenomena in oxides, the same doping principle has been used commonly to explain the relationship between the density variation of oxygen vacancies (Vö) and the electronic resistance. We find that the Vö density can change at a depth of ~10 nm below the Pt electrodes in Pt/Nb:SrTiO₃ cells, depending on the resistance state. Using electron energy loss spectroscopy and secondary ion mass spectrometry, we found that greater Vö density underneath the electrode resulted in higher resistance, contrary to the conventional doping principle of semiconductors. To explain this seemingly anomalous experimental behavior, we provide quantitative explanations on the anomalous BRS behavior by simulating the mobile Vö [J. S. Lee et al., Appl. Phys. Lett. 102, 253503 (2013)] near the Schottky barrier interface.

Original language	English
Article number	066103
Journal	APL Materials
Volume	2
Issue number	6
DOIs	https://doi.org/10.1063/1.4884215
State	Published - 2 Jun 2014

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title = "Anomalous effect due to oxygen vacancy accumulation below the electrode in bipolar resistance switching Pt/Nb:SrTiO3 cells",

abstract = "In conventional semiconductor theory, greater doping decreases the electronic resistance of a semiconductor. For the bipolar resistance switching (BRS) phenomena in oxides, the same doping principle has been used commonly to explain the relationship between the density variation of oxygen vacancies (V{\"o}) and the electronic resistance. We find that the V{\"o} density can change at a depth of ~10 nm below the Pt electrodes in Pt/Nb:SrTiO3 cells, depending on the resistance state. Using electron energy loss spectroscopy and secondary ion mass spectrometry, we found that greater V{\"o} density underneath the electrode resulted in higher resistance, contrary to the conventional doping principle of semiconductors. To explain this seemingly anomalous experimental behavior, we provide quantitative explanations on the anomalous BRS behavior by simulating the mobile V{\"o} [J. S. Lee et al., Appl. Phys. Lett. 102, 253503 (2013)] near the Schottky barrier interface.",

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T1 - Anomalous effect due to oxygen vacancy accumulation below the electrode in bipolar resistance switching Pt/Nb:SrTiO3 cells

AU - Lee, Shinbuhm

AU - Lee, Jae Sung

AU - Park, Jong Bong

AU - Kyoung, Yong Koo

AU - Lee, Myoung Jae

AU - Noh, Tae Won

PY - 2014/6/2

Y1 - 2014/6/2

N2 - In conventional semiconductor theory, greater doping decreases the electronic resistance of a semiconductor. For the bipolar resistance switching (BRS) phenomena in oxides, the same doping principle has been used commonly to explain the relationship between the density variation of oxygen vacancies (Vö) and the electronic resistance. We find that the Vö density can change at a depth of ~10 nm below the Pt electrodes in Pt/Nb:SrTiO3 cells, depending on the resistance state. Using electron energy loss spectroscopy and secondary ion mass spectrometry, we found that greater Vö density underneath the electrode resulted in higher resistance, contrary to the conventional doping principle of semiconductors. To explain this seemingly anomalous experimental behavior, we provide quantitative explanations on the anomalous BRS behavior by simulating the mobile Vö [J. S. Lee et al., Appl. Phys. Lett. 102, 253503 (2013)] near the Schottky barrier interface.

AB - In conventional semiconductor theory, greater doping decreases the electronic resistance of a semiconductor. For the bipolar resistance switching (BRS) phenomena in oxides, the same doping principle has been used commonly to explain the relationship between the density variation of oxygen vacancies (Vö) and the electronic resistance. We find that the Vö density can change at a depth of ~10 nm below the Pt electrodes in Pt/Nb:SrTiO3 cells, depending on the resistance state. Using electron energy loss spectroscopy and secondary ion mass spectrometry, we found that greater Vö density underneath the electrode resulted in higher resistance, contrary to the conventional doping principle of semiconductors. To explain this seemingly anomalous experimental behavior, we provide quantitative explanations on the anomalous BRS behavior by simulating the mobile Vö [J. S. Lee et al., Appl. Phys. Lett. 102, 253503 (2013)] near the Schottky barrier interface.

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Anomalous effect due to oxygen vacancy accumulation below the electrode in bipolar resistance switching Pt/Nb:SrTiO₃ cells

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