Analysis of photovoltaic cell parameters of non-vacuum solution processed Cu(In, Ga)Se2 thin film based solar cells

Firoz Khan; Hyun Jung Lee; Misol Oh; Jae Hyun Kim

doi:10.1016/j.solener.2014.06.038

Analysis of photovoltaic cell parameters of non-vacuum solution processed Cu(In, Ga)Se₂ thin film based solar cells

Firoz Khan, Hyun Jung Lee, Misol Oh, Jae Hyun Kim

Division of Energy Techonology

Daegu Gyeongbuk Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The losses in Cu(In, Ga)Se₂ (CIGS) solar cells due to photovoltaic (PV) cell parameters, namely the shunt resistance R_sh, series resistance R_s, diode ideality factor n, and reverse saturation current density J₀, were analyzed in this study. The PV cell parameters of the solar cells were analytically determined for various doping concentrations of Cu and In in CIGS films. The CIGS films were deposited using a low cost non-toxic solvent (deionized) by a non-vacuum process (spray pyrolysis technique). They were subsequently characterized using XRD, FE-SEM, I-V and UV-Vis techniques to correlate the structural, electrical, and optical properties of the films with solar cell performance. Maximum short circuit current density of 0.0218A/cm² is achieved for Cu/Se and In/Se molar ratios of 0.131 and 0.318, respectively. However, the maximum obtained V_oc value is 0.431V for Cu/Se and In/Se molar ratios of 0.105 and 0.191, respectively. The maximum achieved efficiency was ~4.38% for Cu/Se and In/Se molar ratios of 0.105 and 0.191, respectively. Analytically predicted values of R_sh, R_s, n, and J₀ were 116.82Ωcm², 4.64Ωcm², 1.8016, and 1.4952×10^-6A/cm², respectively.

Original language	English
Pages (from-to)	189-198
Number of pages	10
Journal	Solar Energy
Volume	108
DOIs	https://doi.org/10.1016/j.solener.2014.06.038
State	Published - Oct 2014

Bibliographical note

Funding Information:
This work was financially supported by the Pioneer Research Center Program through the National Research Foundation of South Korea ( 2011-0001649 ), Ministry of Science, ICT and Future Planning (MSIP). Also partially funded by the Energy International Collaboration Research & Development Program of the Ministry of Trade, Industry & Energy (MOTIE) ( 2011-8520010050 ), South Korea.

Keywords

Non-vacuum process
Photovoltaic cell parameters
Thin film solar cell

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.solener.2014.06.038

Cite this

@article{0b5d3eb5569046bf939d88fbe33a1aaf,

title = "Analysis of photovoltaic cell parameters of non-vacuum solution processed Cu(In, Ga)Se2 thin film based solar cells",

abstract = "The losses in Cu(In, Ga)Se2 (CIGS) solar cells due to photovoltaic (PV) cell parameters, namely the shunt resistance Rsh, series resistance Rs, diode ideality factor n, and reverse saturation current density J0, were analyzed in this study. The PV cell parameters of the solar cells were analytically determined for various doping concentrations of Cu and In in CIGS films. The CIGS films were deposited using a low cost non-toxic solvent (deionized) by a non-vacuum process (spray pyrolysis technique). They were subsequently characterized using XRD, FE-SEM, I-V and UV-Vis techniques to correlate the structural, electrical, and optical properties of the films with solar cell performance. Maximum short circuit current density of 0.0218A/cm2 is achieved for Cu/Se and In/Se molar ratios of 0.131 and 0.318, respectively. However, the maximum obtained Voc value is 0.431V for Cu/Se and In/Se molar ratios of 0.105 and 0.191, respectively. The maximum achieved efficiency was ~4.38% for Cu/Se and In/Se molar ratios of 0.105 and 0.191, respectively. Analytically predicted values of Rsh, Rs, n, and J0 were 116.82Ωcm2, 4.64Ωcm2, 1.8016, and 1.4952×10-6A/cm2, respectively.",

keywords = "Non-vacuum process, Photovoltaic cell parameters, Thin film solar cell",

author = "Firoz Khan and Lee, {Hyun Jung} and Misol Oh and Kim, {Jae Hyun}",

note = "Funding Information: This work was financially supported by the Pioneer Research Center Program through the National Research Foundation of South Korea ( 2011-0001649 ), Ministry of Science, ICT and Future Planning (MSIP). Also partially funded by the Energy International Collaboration Research & Development Program of the Ministry of Trade, Industry & Energy (MOTIE) ( 2011-8520010050 ), South Korea.",

year = "2014",

month = oct,

doi = "10.1016/j.solener.2014.06.038",

language = "English",

volume = "108",

pages = "189--198",

journal = "Solar Energy",

issn = "0038-092X",

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T1 - Analysis of photovoltaic cell parameters of non-vacuum solution processed Cu(In, Ga)Se2 thin film based solar cells

AU - Khan, Firoz

AU - Lee, Hyun Jung

AU - Oh, Misol

AU - Kim, Jae Hyun

N1 - Funding Information: This work was financially supported by the Pioneer Research Center Program through the National Research Foundation of South Korea ( 2011-0001649 ), Ministry of Science, ICT and Future Planning (MSIP). Also partially funded by the Energy International Collaboration Research & Development Program of the Ministry of Trade, Industry & Energy (MOTIE) ( 2011-8520010050 ), South Korea.

PY - 2014/10

Y1 - 2014/10

N2 - The losses in Cu(In, Ga)Se2 (CIGS) solar cells due to photovoltaic (PV) cell parameters, namely the shunt resistance Rsh, series resistance Rs, diode ideality factor n, and reverse saturation current density J0, were analyzed in this study. The PV cell parameters of the solar cells were analytically determined for various doping concentrations of Cu and In in CIGS films. The CIGS films were deposited using a low cost non-toxic solvent (deionized) by a non-vacuum process (spray pyrolysis technique). They were subsequently characterized using XRD, FE-SEM, I-V and UV-Vis techniques to correlate the structural, electrical, and optical properties of the films with solar cell performance. Maximum short circuit current density of 0.0218A/cm2 is achieved for Cu/Se and In/Se molar ratios of 0.131 and 0.318, respectively. However, the maximum obtained Voc value is 0.431V for Cu/Se and In/Se molar ratios of 0.105 and 0.191, respectively. The maximum achieved efficiency was ~4.38% for Cu/Se and In/Se molar ratios of 0.105 and 0.191, respectively. Analytically predicted values of Rsh, Rs, n, and J0 were 116.82Ωcm2, 4.64Ωcm2, 1.8016, and 1.4952×10-6A/cm2, respectively.

AB - The losses in Cu(In, Ga)Se2 (CIGS) solar cells due to photovoltaic (PV) cell parameters, namely the shunt resistance Rsh, series resistance Rs, diode ideality factor n, and reverse saturation current density J0, were analyzed in this study. The PV cell parameters of the solar cells were analytically determined for various doping concentrations of Cu and In in CIGS films. The CIGS films were deposited using a low cost non-toxic solvent (deionized) by a non-vacuum process (spray pyrolysis technique). They were subsequently characterized using XRD, FE-SEM, I-V and UV-Vis techniques to correlate the structural, electrical, and optical properties of the films with solar cell performance. Maximum short circuit current density of 0.0218A/cm2 is achieved for Cu/Se and In/Se molar ratios of 0.131 and 0.318, respectively. However, the maximum obtained Voc value is 0.431V for Cu/Se and In/Se molar ratios of 0.105 and 0.191, respectively. The maximum achieved efficiency was ~4.38% for Cu/Se and In/Se molar ratios of 0.105 and 0.191, respectively. Analytically predicted values of Rsh, Rs, n, and J0 were 116.82Ωcm2, 4.64Ωcm2, 1.8016, and 1.4952×10-6A/cm2, respectively.

KW - Non-vacuum process

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