Analysis of GMR profiles in dual spin-valve structure using triple domain model

Dong Young Kim; C. G. Kim; S. S. Lee; D. G. Hwang; J. K. Lee

doi:10.1109/INTMAG.2002.1001239

Analysis of GMR profiles in dual spin-valve structure using triple domain model

Dong Young Kim, C. G. Kim, S. S. Lee, D. G. Hwang, J. K. Lee

Department of Physics and Chemistry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The change in resistivity due to the dual spin-valve effect (DSV) arises from the relative angle between the magnetization directions of the two pinned layers and a free layer. The enhanced GMR ratio has been explained in terms of the specular scattering of conduction electron at the metal/insulator interface of top and bottom surfaces. In this work, the GMR profiles were measured in a sample of NiO/NiFeCo/Cu/NiFeCo/Cu/NiFeCo/NiO in the field range of -1 kOe to 1 kOe at an angle θ=0° and 90°, respectively, where θ is the angle from the direction of annealing field. The measured GMR profiles were compared with the calculation using the extended triple domain model.

Original language	English
Title of host publication	INTERMAG Europe 2002 - IEEE International Magnetics Conference
Editors	J. Fidler, B. Hillebrands, C. Ross, D. Weller, L. Folks, E. Hill, M. Vazquez Villalabeitia, J. A. Bain, Jo De Boeck, R. Wood
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	0780373650, 9780780373655
DOIs	https://doi.org/10.1109/INTMAG.2002.1001239
State	Published - 2002
Event	2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 - Amsterdam, Netherlands Duration: 28 Apr 2002 → 2 May 2002

Publication series

Name	INTERMAG Europe 2002 - IEEE International Magnetics Conference

Conference

Conference	2002 IEEE International Magnetics Conference, INTERMAG Europe 2002
Country/Territory	Netherlands
City	Amsterdam
Period	28/04/02 → 2/05/02

Bibliographical note

Publisher Copyright:
©2002 IEEE.

Access to Document

10.1109/INTMAG.2002.1001239

Cite this

Kim, D. Y., Kim, C. G., Lee, S. S., Hwang, D. G., & Lee, J. K. (2002). Analysis of GMR profiles in dual spin-valve structure using triple domain model. In J. Fidler, B. Hillebrands, C. Ross, D. Weller, L. Folks, E. Hill, M. Vazquez Villalabeitia, J. A. Bain, J. De Boeck, & R. Wood (Eds.), INTERMAG Europe 2002 - IEEE International Magnetics Conference Article 1001239 (INTERMAG Europe 2002 - IEEE International Magnetics Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2002.1001239

Kim, Dong Young ; Kim, C. G. ; Lee, S. S. et al. / Analysis of GMR profiles in dual spin-valve structure using triple domain model. INTERMAG Europe 2002 - IEEE International Magnetics Conference. editor / J. Fidler ; B. Hillebrands ; C. Ross ; D. Weller ; L. Folks ; E. Hill ; M. Vazquez Villalabeitia ; J. A. Bain ; Jo De Boeck ; R. Wood. Institute of Electrical and Electronics Engineers Inc., 2002. (INTERMAG Europe 2002 - IEEE International Magnetics Conference).

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title = "Analysis of GMR profiles in dual spin-valve structure using triple domain model",

abstract = "The change in resistivity due to the dual spin-valve effect (DSV) arises from the relative angle between the magnetization directions of the two pinned layers and a free layer. The enhanced GMR ratio has been explained in terms of the specular scattering of conduction electron at the metal/insulator interface of top and bottom surfaces. In this work, the GMR profiles were measured in a sample of NiO/NiFeCo/Cu/NiFeCo/Cu/NiFeCo/NiO in the field range of -1 kOe to 1 kOe at an angle θ=0° and 90°, respectively, where θ is the angle from the direction of annealing field. The measured GMR profiles were compared with the calculation using the extended triple domain model.",

author = "Kim, {Dong Young} and Kim, {C. G.} and Lee, {S. S.} and Hwang, {D. G.} and Lee, {J. K.}",

note = "Publisher Copyright: {\textcopyright}2002 IEEE.; 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 ; Conference date: 28-04-2002 Through 02-05-2002",

year = "2002",

doi = "10.1109/INTMAG.2002.1001239",

language = "English",

series = "INTERMAG Europe 2002 - IEEE International Magnetics Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

editor = "J. Fidler and B. Hillebrands and C. Ross and D. Weller and L. Folks and E. Hill and {Vazquez Villalabeitia}, M. and Bain, {J. A.} and {De Boeck}, Jo and R. Wood",

booktitle = "INTERMAG Europe 2002 - IEEE International Magnetics Conference",

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Kim, DY, Kim, CG, Lee, SS, Hwang, DG & Lee, JK 2002, Analysis of GMR profiles in dual spin-valve structure using triple domain model. in J Fidler, B Hillebrands, C Ross, D Weller, L Folks, E Hill, M Vazquez Villalabeitia, JA Bain, J De Boeck & R Wood (eds), INTERMAG Europe 2002 - IEEE International Magnetics Conference., 1001239, INTERMAG Europe 2002 - IEEE International Magnetics Conference, Institute of Electrical and Electronics Engineers Inc., 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002, Amsterdam, Netherlands, 28/04/02. https://doi.org/10.1109/INTMAG.2002.1001239

Analysis of GMR profiles in dual spin-valve structure using triple domain model. / Kim, Dong Young; Kim, C. G.; Lee, S. S. et al.
INTERMAG Europe 2002 - IEEE International Magnetics Conference. ed. / J. Fidler; B. Hillebrands; C. Ross; D. Weller; L. Folks; E. Hill; M. Vazquez Villalabeitia; J. A. Bain; Jo De Boeck; R. Wood. Institute of Electrical and Electronics Engineers Inc., 2002. 1001239 (INTERMAG Europe 2002 - IEEE International Magnetics Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - The change in resistivity due to the dual spin-valve effect (DSV) arises from the relative angle between the magnetization directions of the two pinned layers and a free layer. The enhanced GMR ratio has been explained in terms of the specular scattering of conduction electron at the metal/insulator interface of top and bottom surfaces. In this work, the GMR profiles were measured in a sample of NiO/NiFeCo/Cu/NiFeCo/Cu/NiFeCo/NiO in the field range of -1 kOe to 1 kOe at an angle θ=0° and 90°, respectively, where θ is the angle from the direction of annealing field. The measured GMR profiles were compared with the calculation using the extended triple domain model.

AB - The change in resistivity due to the dual spin-valve effect (DSV) arises from the relative angle between the magnetization directions of the two pinned layers and a free layer. The enhanced GMR ratio has been explained in terms of the specular scattering of conduction electron at the metal/insulator interface of top and bottom surfaces. In this work, the GMR profiles were measured in a sample of NiO/NiFeCo/Cu/NiFeCo/Cu/NiFeCo/NiO in the field range of -1 kOe to 1 kOe at an angle θ=0° and 90°, respectively, where θ is the angle from the direction of annealing field. The measured GMR profiles were compared with the calculation using the extended triple domain model.

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BT - INTERMAG Europe 2002 - IEEE International Magnetics Conference

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A2 - Hillebrands, B.

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Kim DY, Kim CG, Lee SS, Hwang DG, Lee JK. Analysis of GMR profiles in dual spin-valve structure using triple domain model. In Fidler J, Hillebrands B, Ross C, Weller D, Folks L, Hill E, Vazquez Villalabeitia M, Bain JA, De Boeck J, Wood R, editors, INTERMAG Europe 2002 - IEEE International Magnetics Conference. Institute of Electrical and Electronics Engineers Inc. 2002. 1001239. (INTERMAG Europe 2002 - IEEE International Magnetics Conference). doi: 10.1109/INTMAG.2002.1001239

Analysis of GMR profiles in dual spin-valve structure using triple domain model

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