TY - JOUR
T1 - Aluminum oxide formation at Al/L 1-xSr xMnO 3 interface
T2 - A computational study for resistance random access memory applications
AU - Lee, Nodo
AU - Lansac, Yves
AU - Jang, Yun Hee
PY - 2011/1
Y1 - 2011/1
N2 - Resistance random access memory (ReRAM) is emerging as a next-generation nonvolatile memory. One of the most promising materials for the ReRAM application is a composite of a reactive metal [such as aluminum (Al)] and a mixed-valance manganite [such as La 1-xCa xMnO 3 (LCMO) and La 1-xSr xMnO 3 (LSMO)]. One of the current hypotheses regarding the origin of the resistive switching of such systems is a voltage-controlled reversible formation of a high-resistance aluminum oxide (AlO x) layer at the Al/LC(S)MO interface through oxygen migration from LC(S)MO. To validate this hypothesis, quantum mechanics (density functional theory) calculations were carried out on an atomistic model of the resistive-switching phenomena at the Al/LSMO interface (the composite systems of Al/LSMO and AlO x/LSMO) as well as on the component materials such as Al, AlO x, LaMnO 3, LaMnO 3-δ, La 1-xSr xMnO 3, and La 1-xSr xMnO 3-δ. The changes in the structure, energy, and electronic structure of these systems during the oxygen vacancy formation in LSMO, the oxygen migration through the Al/LSMO interface, and the AlO x formation were investigated.
AB - Resistance random access memory (ReRAM) is emerging as a next-generation nonvolatile memory. One of the most promising materials for the ReRAM application is a composite of a reactive metal [such as aluminum (Al)] and a mixed-valance manganite [such as La 1-xCa xMnO 3 (LCMO) and La 1-xSr xMnO 3 (LSMO)]. One of the current hypotheses regarding the origin of the resistive switching of such systems is a voltage-controlled reversible formation of a high-resistance aluminum oxide (AlO x) layer at the Al/LC(S)MO interface through oxygen migration from LC(S)MO. To validate this hypothesis, quantum mechanics (density functional theory) calculations were carried out on an atomistic model of the resistive-switching phenomena at the Al/LSMO interface (the composite systems of Al/LSMO and AlO x/LSMO) as well as on the component materials such as Al, AlO x, LaMnO 3, LaMnO 3-δ, La 1-xSr xMnO 3, and La 1-xSr xMnO 3-δ. The changes in the structure, energy, and electronic structure of these systems during the oxygen vacancy formation in LSMO, the oxygen migration through the Al/LSMO interface, and the AlO x formation were investigated.
KW - Density functional theory
KW - Oxygen migration
KW - Resistance random access memory
KW - Resistive switching
UR - https://www.scopus.com/pages/publications/84857021631
U2 - 10.1166/jnn.2011.3202
DO - 10.1166/jnn.2011.3202
M3 - Article
AN - SCOPUS:84857021631
SN - 1533-4880
VL - 11
SP - 339
EP - 343
JO - Journal of Nanoscience and Nanotechnology
JF - Journal of Nanoscience and Nanotechnology
IS - 1
ER -