Absolute In coverage and bias-dependent STM images of the Si(111)4x1-In surface

Geunseop Lee, Sang Yong Yu, Hanchul Kim, Ja Yong Koo, Hyung Ik Lee, Dae Won Moon

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

We report on the absolute measurement of In coverage on the Si(111)4x1-In surface using medium-energy ion scattering, and present bias-dependent scanning tunneling microscopy (STM) images. The In coverage was determined to be I monolayer (ML). This result is in contrast to previous results of 3/4-ML In determined by semidirect measurements using Auger electron spectroscopy and STM. Our result supports a 4x1-In structural model consisting of four surface In rows, which was constructed from the recent surface x-ray diffraction study and tested by subsequent theoretical calculations. The bias-dependent STM images are well reproduced by ab initio simulations based on this I-ML-In model.

Original languageEnglish
Article number035327
Pages (from-to)353271-353275
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume67
Issue number3
StatePublished - 15 Jan 2003

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