Abstract
We report on the absolute measurement of In coverage on the Si(111)4x1-In surface using medium-energy ion scattering, and present bias-dependent scanning tunneling microscopy (STM) images. The In coverage was determined to be I monolayer (ML). This result is in contrast to previous results of 3/4-ML In determined by semidirect measurements using Auger electron spectroscopy and STM. Our result supports a 4x1-In structural model consisting of four surface In rows, which was constructed from the recent surface x-ray diffraction study and tested by subsequent theoretical calculations. The bias-dependent STM images are well reproduced by ab initio simulations based on this I-ML-In model.
Original language | English |
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Article number | 035327 |
Pages (from-to) | 353271-353275 |
Number of pages | 5 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 67 |
Issue number | 3 |
State | Published - 15 Jan 2003 |