Absolute In coverage and bias-dependent STM images of the Si(111)4×1-In surface

Geunseop Lee; Sang Yong Yu; Hanchul Kim; Ja Yong Koo; Hyung Ik Lee; Dae Won Moon

doi:10.1103/PhysRevB.67.035327

Absolute In coverage and bias-dependent STM images of the Si(111)4×1-In surface

Geunseop Lee, Sang Yong Yu, Hanchul Kim, Ja Yong Koo, Hyung Ik Lee, Dae Won Moon

Department of New Biology

Korea Research Institute of Standards and Science

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We report on the absolute measurement of In coverage on the Si(111)4×1-In surface using medium-energy ion scattering, and present bias-dependent scanning tunneling microscopy (STM) images. The In coverage was determined to be 1 monolayer (ML). This result is in contrast to previous results of 3/4-ML In determined by semidirect measurements using Auger electron spectroscopy and STM. Our result supports a 4×1-In structural model consisting of four surface In rows, which was constructed from the recent surface x-ray diffraction study and tested by subsequent theoretical calculations. The bias-dependent STM images are well reproduced by ab initio simulations based on this 1-ML-In model.

Original language	English
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	67
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevB.67.035327
State	Published - 2003

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10.1103/PhysRevB.67.035327

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title = "Absolute In coverage and bias-dependent STM images of the Si(111)4×1-In surface",

abstract = "We report on the absolute measurement of In coverage on the Si(111)4×1-In surface using medium-energy ion scattering, and present bias-dependent scanning tunneling microscopy (STM) images. The In coverage was determined to be 1 monolayer (ML). This result is in contrast to previous results of 3/4-ML In determined by semidirect measurements using Auger electron spectroscopy and STM. Our result supports a 4×1-In structural model consisting of four surface In rows, which was constructed from the recent surface x-ray diffraction study and tested by subsequent theoretical calculations. The bias-dependent STM images are well reproduced by ab initio simulations based on this 1-ML-In model.",

author = "Geunseop Lee and Yu, {Sang Yong} and Hanchul Kim and Koo, {Ja Yong} and Lee, {Hyung Ik} and Moon, {Dae Won}",

year = "2003",

doi = "10.1103/PhysRevB.67.035327",

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volume = "67",

journal = "Physical Review B - Condensed Matter and Materials Physics",

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T1 - Absolute In coverage and bias-dependent STM images of the Si(111)4×1-In surface

AU - Lee, Geunseop

AU - Yu, Sang Yong

AU - Kim, Hanchul

AU - Koo, Ja Yong

AU - Lee, Hyung Ik

AU - Moon, Dae Won

PY - 2003

Y1 - 2003

N2 - We report on the absolute measurement of In coverage on the Si(111)4×1-In surface using medium-energy ion scattering, and present bias-dependent scanning tunneling microscopy (STM) images. The In coverage was determined to be 1 monolayer (ML). This result is in contrast to previous results of 3/4-ML In determined by semidirect measurements using Auger electron spectroscopy and STM. Our result supports a 4×1-In structural model consisting of four surface In rows, which was constructed from the recent surface x-ray diffraction study and tested by subsequent theoretical calculations. The bias-dependent STM images are well reproduced by ab initio simulations based on this 1-ML-In model.

AB - We report on the absolute measurement of In coverage on the Si(111)4×1-In surface using medium-energy ion scattering, and present bias-dependent scanning tunneling microscopy (STM) images. The In coverage was determined to be 1 monolayer (ML). This result is in contrast to previous results of 3/4-ML In determined by semidirect measurements using Auger electron spectroscopy and STM. Our result supports a 4×1-In structural model consisting of four surface In rows, which was constructed from the recent surface x-ray diffraction study and tested by subsequent theoretical calculations. The bias-dependent STM images are well reproduced by ab initio simulations based on this 1-ML-In model.

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DO - 10.1103/PhysRevB.67.035327

M3 - Article

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VL - 67

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 3

ER -

Absolute In coverage and bias-dependent STM images of the Si(111)4×1-In surface

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