A characterization study of a nanowire-network transistor with various channel layers

Jae Eun Jang; Seung Nam Cha; Tim P. Butler; Jung Inn Sohn; Jung Woo Kim; Young Wan Jin; Gehan A.J. Amaratunga; Jae Eun Jung; Jong Min Kim

doi:10.1002/adma.200900697

A characterization study of a nanowire-network transistor with various channel layers

Jae Eun Jang, Seung Nam Cha, Tim P. Butler, Jung Inn Sohn, Jung Woo Kim, Young Wan Jin, Gehan A.J. Amaratunga, Jae Eun Jung, Jong Min Kim

Department of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The performance of a ZnO network transistor is studied by means of the change in threshold slope with varying number of nanowire channel layers. The threshold slope broadens as the number of layers in the channel increases and, in the case of a two-layer channel, a double turn-on effect can be observed. The gatefield simulation shows gate-field distortion by the surface of the nanowire.

Original language	English
Pages (from-to)	4139-4142
Number of pages	4
Journal	Advanced Materials
Volume	21
Issue number	41
DOIs	https://doi.org/10.1002/adma.200900697
State	Published - 6 Nov 2009

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title = "A characterization study of a nanowire-network transistor with various channel layers",

abstract = "The performance of a ZnO network transistor is studied by means of the change in threshold slope with varying number of nanowire channel layers. The threshold slope broadens as the number of layers in the channel increases and, in the case of a two-layer channel, a double turn-on effect can be observed. The gatefield simulation shows gate-field distortion by the surface of the nanowire.",

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AU - Jang, Jae Eun

AU - Cha, Seung Nam

AU - Butler, Tim P.

AU - Sohn, Jung Inn

AU - Kim, Jung Woo

AU - Jin, Young Wan

AU - Amaratunga, Gehan A.J.

AU - Jung, Jae Eun

AU - Kim, Jong Min

PY - 2009/11/6

Y1 - 2009/11/6

N2 - The performance of a ZnO network transistor is studied by means of the change in threshold slope with varying number of nanowire channel layers. The threshold slope broadens as the number of layers in the channel increases and, in the case of a two-layer channel, a double turn-on effect can be observed. The gatefield simulation shows gate-field distortion by the surface of the nanowire.

AB - The performance of a ZnO network transistor is studied by means of the change in threshold slope with varying number of nanowire channel layers. The threshold slope broadens as the number of layers in the channel increases and, in the case of a two-layer channel, a double turn-on effect can be observed. The gatefield simulation shows gate-field distortion by the surface of the nanowire.

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VL - 21

SP - 4139

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JO - Advanced Materials

JF - Advanced Materials

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ER -

A characterization study of a nanowire-network transistor with various channel layers

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