A 114-aFrms-Resolution 46-NF/10-MΩ-Range Digital-Intensive Reconfigurable RC-to-Digital Converter with Parasitic-Insensitive Femto-Farad Baseline Sensing

Arup K. George; Wooyoon Shim; Minkyu Je; Junghyup Lee

doi:10.1109/VLSIC.2018.8502332

A 114-aF_rms-Resolution 46-NF/10-MΩ-Range Digital-Intensive Reconfigurable RC-to-Digital Converter with Parasitic-Insensitive Femto-Farad Baseline Sensing

Arup K. George
, Wooyoon Shim
, Minkyu Je
, Junghyup Lee

Department of Electrical Engineering and Computer Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

18 Scopus citations

Abstract

This paper presents a digital-intensive dynamically reconfigurable RC-to-digital converter with an input range of 46 nF/10 MΩ, suitable for reading out R or C sensors in a time-interleaved way. Its reconfigurability also allows parasitic-insensitive sensing of femto-farad baseline capacitances. Implemented in a 0.18-μm CMOS process, it uses a swing-boosted period-modulation (SB-PM) frontend, achieving a capacitance resolution of 114 aF_rms corresponding to an FOM of 4.04 pJ/conversion-step from a 1-V supply.

Original language	English
Title of host publication	2018 IEEE Symposium on VLSI Circuits, VLSI Circuits 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	157-158
Number of pages	2
ISBN (Electronic)	9781538667002
DOIs	https://doi.org/10.1109/VLSIC.2018.8502332
State	Published - 22 Oct 2018
Event	32nd IEEE Symposium on VLSI Circuits, VLSI Circuits 2018 - Honolulu, United States Duration: 18 Jun 2018 → 22 Jun 2018

Publication series

Name	IEEE Symposium on VLSI Circuits, Digest of Technical Papers
Volume	2018-June

Conference

Conference	32nd IEEE Symposium on VLSI Circuits, VLSI Circuits 2018
Country/Territory	United States
City	Honolulu
Period	18/06/18 → 22/06/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Keywords

Capacitance/resistance-to-digital converter
low voltage
parasitic insensitive
reconfigurable
wide input range

Access to Document

10.1109/VLSIC.2018.8502332

Cite this

George, A. K., Shim, W., Je, M., & Lee, J. (2018). A 114-aF_rms-Resolution 46-NF/10-MΩ-Range Digital-Intensive Reconfigurable RC-to-Digital Converter with Parasitic-Insensitive Femto-Farad Baseline Sensing. In 2018 IEEE Symposium on VLSI Circuits, VLSI Circuits 2018 (pp. 157-158). Article 8502332 (IEEE Symposium on VLSI Circuits, Digest of Technical Papers; Vol. 2018-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIC.2018.8502332

George, Arup K. ; Shim, Wooyoon ; Je, Minkyu et al. / A 114-aF_rms-Resolution 46-NF/10-MΩ-Range Digital-Intensive Reconfigurable RC-to-Digital Converter with Parasitic-Insensitive Femto-Farad Baseline Sensing. 2018 IEEE Symposium on VLSI Circuits, VLSI Circuits 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 157-158 (IEEE Symposium on VLSI Circuits, Digest of Technical Papers).

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abstract = "This paper presents a digital-intensive dynamically reconfigurable RC-to-digital converter with an input range of 46 nF/10 MΩ, suitable for reading out R or C sensors in a time-interleaved way. Its reconfigurability also allows parasitic-insensitive sensing of femto-farad baseline capacitances. Implemented in a 0.18-μm CMOS process, it uses a swing-boosted period-modulation (SB-PM) frontend, achieving a capacitance resolution of 114 aFrms corresponding to an FOM of 4.04 pJ/conversion-step from a 1-V supply.",

keywords = "Capacitance/resistance-to-digital converter, low voltage, parasitic insensitive, reconfigurable, wide input range",

author = "George, \{Arup K.\} and Wooyoon Shim and Minkyu Je and Junghyup Lee",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 32nd IEEE Symposium on VLSI Circuits, VLSI Circuits 2018 ; Conference date: 18-06-2018 Through 22-06-2018",

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George, AK, Shim, W, Je, M & Lee, J 2018, A 114-aF_rms-Resolution 46-NF/10-MΩ-Range Digital-Intensive Reconfigurable RC-to-Digital Converter with Parasitic-Insensitive Femto-Farad Baseline Sensing. in 2018 IEEE Symposium on VLSI Circuits, VLSI Circuits 2018., 8502332, IEEE Symposium on VLSI Circuits, Digest of Technical Papers, vol. 2018-June, Institute of Electrical and Electronics Engineers Inc., pp. 157-158, 32nd IEEE Symposium on VLSI Circuits, VLSI Circuits 2018, Honolulu, United States, 18/06/18. https://doi.org/10.1109/VLSIC.2018.8502332

A 114-aF_rms-Resolution 46-NF/10-MΩ-Range Digital-Intensive Reconfigurable RC-to-Digital Converter with Parasitic-Insensitive Femto-Farad Baseline Sensing. / George, Arup K.; Shim, Wooyoon; Je, Minkyu et al.
2018 IEEE Symposium on VLSI Circuits, VLSI Circuits 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 157-158 8502332 (IEEE Symposium on VLSI Circuits, Digest of Technical Papers; Vol. 2018-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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George AK, Shim W, Je M, Lee J. A 114-aF_rms-Resolution 46-NF/10-MΩ-Range Digital-Intensive Reconfigurable RC-to-Digital Converter with Parasitic-Insensitive Femto-Farad Baseline Sensing. In 2018 IEEE Symposium on VLSI Circuits, VLSI Circuits 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 157-158. 8502332. (IEEE Symposium on VLSI Circuits, Digest of Technical Papers). doi: 10.1109/VLSIC.2018.8502332