3.1 A PVT-Insensitive Sub-Ranging Current Reference Achieving 11.4ppm/°C from -20°C to 125°C

Pangi Park, Junghyup Lee, Seonghwan Cho

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

Improving the temperature stability of the reference current (IREF) is essential for the reliable operation of precision electronics for various applications, including automotive and industrial sensors. There are several approaches to generate a temperature-stable IREF, which include a weighted sum of PTAT and CTAT currents, dividing a reference voltage by a resistor with a similar temperature coefficient (TC) [1-3], and biasing a MOSFET at its zero-temperature-coefficient bias point [4]. While these techniques can remove the first-order TC, the remaining curvature due to the second-order TC limits the achievable temperature stability. In [5], the curvature in a reference current is corrected by using a curvature-corrected bandgap reference voltage and a switched capacitor resistor. However, it requires a stable and bulky reference oscillator (e.g., crystal).

Original languageEnglish
Title of host publication2024 IEEE International Solid-State Circuits Conference, ISSCC 2024
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages54-56
Number of pages3
ISBN (Electronic)9798350306200
DOIs
StatePublished - 2024
Event2024 IEEE International Solid-State Circuits Conference, ISSCC 2024 - San Francisco, United States
Duration: 18 Feb 202422 Feb 2024

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
ISSN (Print)0193-6530

Conference

Conference2024 IEEE International Solid-State Circuits Conference, ISSCC 2024
Country/TerritoryUnited States
CitySan Francisco
Period18/02/2422/02/24

Bibliographical note

Publisher Copyright:
© 2024 IEEE.

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