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Calculated based on number of publications stored in Pure and citations from Scopus
Calculated based on number of publications stored in Pure and citations from Scopus
Calculated based on number of publications stored in Pure and citations from Scopus
20012024

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  • 2014

    Influences of charged dislocations on performance of III-V compound semiconductor FinFETs

    Hur, J. H., Lee, M. J., Cho, S. H. & Park, Y. S., 2014, Gettering and Defect Engineering in Semiconductor Technology XV. Trans Tech Publications Ltd, p. 429-434 6 p. (Solid State Phenomena; vol. 205-206).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    4 Scopus citations
  • InGaAs inversion layers band structure, electrostatics, and mobility modeling based on 8 Band k · p theory

    Pham, A. T., Jin, S., Choi, W., Lee, M. J., Cho, S. H., Kim, Y. T., Lee, K. H. & Park, Y., 5 Nov 2014, European Solid-State Device Research Conference. Bez, R., Pavan, P. & Meneghesso, G. (eds.). IEEE Computer Society, p. 114-117 4 p. 6948771. (European Solid-State Device Research Conference).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • 2013

    Performance of threshold switching in chalcogenide glass for 3D stackable selector

    Kim, S., Kim, Y. B., Kim, K. M., Kim, S. J., Lee, S. R., Chang, M., Cho, E., Lee, M. J., Lee, D., Kim, C. J., Chung, U. I. & Yoo, I. K., 2013, 2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers. p. T240-T241 6576660. (Digest of Technical Papers - Symposium on VLSI Technology).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    73 Scopus citations
  • 2012

    Highly-scalable threshold switching select device based on chaclogenide glasses for 3D nanoscaled memory arrays

    Lee, M. J., Lee, D., Kim, H., Choi, H. S., Park, J. B., Kim, H. G., Cha, Y. K., Chung, U. I., Yoo, I. K. & Kim, K., 2012, 2012 IEEE International Electron Devices Meeting, IEDM 2012. p. 2.6.1-2.6.3 6478966. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    58 Scopus citations
  • Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory

    Lee, S. R., Kim, Y. B., Chang, M., Kim, K. M., Lee, C. B., Hur, J. H., Park, G. S., Lee, D., Lee, M. J., Kim, C. J., Chung, U. I., Yoo, I. K. & Kim, K., 2012, 2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers. p. 71-72 2 p. 6242466. (Digest of Technical Papers - Symposium on VLSI Technology).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    170 Scopus citations
  • 2011

    Bi-layered RRAM with unlimited endurance and extremely uniform switching

    Kim, Y. B., Lee, S. R., Lee, D., Lee, C. B., Chang, M., Hur, J. H., Lee, M. J., Park, G. S., Kim, C. J., Chung, U. I., Yoo, I. K. & Kim, K., 2011, 2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers. p. 52-53 2 p. 5984628. (Digest of Technical Papers - Symposium on VLSI Technology).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    174 Scopus citations
  • 2008

    Stack friendly all-oxide 3D RRAM using galnZnO peripheral TFT realized over glass substrates

    Lee, M. J., Lee, C. B., Kim, S., Yin, H., Park, J., Ahn, S. E., Kang, B. S., Kim, K. H., Stefanovich, G., Song, I., Kim, S. W., Lee, J. H., Chung, S. J., Kim, Y. H., Lee, C. S., Park, J. B., Baek, I. G., Kim, C. J. & Park, Y., 2008, 2008 IEEE International Electron Devices Meeting, IEDM 2008. 4796620. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    28 Scopus citations
  • 2005

    Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application

    Baek, I. G., Kim, D. C., Lee, M. J., Kim, H. J., Yim, E. K., Lee, M. S., Lee, J. E., Ahn, S. E., Seo, S., Lee, J. H., Park, J. C., Cha, Y. K., Park, S. O., Kim, H. S., Yoo, I. K., Chung, U. I., Moon, J. T. & Ryu, B. I., 2005, IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. p. 750-753 4 p. 1609462. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2005).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    262 Scopus citations
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