Material Science
Film
100%
Oxide Compound
83%
Density
76%
Thin Films
75%
Devices
40%
Thin-Film Transistor
32%
Electronic Circuit
31%
Oxide
28%
Capacitor
27%
Transition Metal Oxide
27%
Oxide Semiconductor
27%
Thermoelectrics
24%
Pulsed Laser Deposition
22%
Two-Dimensional Material
21%
Transistor
21%
Annealing
21%
Schottky Barrier
20%
Thin Films
18%
Temperature
18%
Electrode
17%
Resistive Random-Access Memory
15%
Nanowires
15%
Oxygen Vacancy
15%
Switch
14%
Cell
14%
Thermoelectric Materials
14%
Diode
12%
Tantalum
11%
Field Effect Transistors
11%
Material
10%
Capacitance
10%
Electrical Property
10%
Current-Voltage Characteristic
10%
Zirconia
10%
Transition Metal Dichalcogenides
9%
Defect
9%
Multilayers
9%
Electrical Resistivity
9%
Heterojunction
9%
Dielectric Material
8%
Monolayers
8%
Semiconductor Material
8%
Durability
7%
ZnO
7%
Dielectric Property
7%
Chalcogenides Glass
7%
Oxide Film
7%
Layered Material
7%
Photosensor
7%
Metal Oxide
7%
Engineering
Resistive
91%
Nonvolatile Memory
38%
Thin Films
37%
Switching
30%
Thin-Film Transistor
26%
Schottky Barrier
25%
Deposited Film
24%
Oxide Semiconductor
22%
Low-Temperature
20%
Resistance Change
15%
Cross Point
15%
Polycrystalline
14%
Pulsed Laser
13%
Switching Threshold
13%
High Resistance State
13%
Two Dimensional
12%
Circuit Breaker
12%
Device Structure
12%
Electric Potential
12%
Photocurrent
11%
Bistables
11%
Metal-Insulator-Metal
10%
Resistive Random Access Memory
10%
Network Model
10%
Double Layer
10%
Characteristics
10%
Glass Substrate
9%
Polymer Substrate
9%
Random Access Memory Device
9%
Oxygen Vacancy
9%
High Density
9%
Quantum Dot
8%
Device Performance
8%
Random Access Memory
8%
Field-Effect Transistor
8%
Voltage Fluctuation
8%
Electromechanical Property
7%
Deposition Method
7%
Room Temperature
7%
Conductive
7%
Passivation Layer
7%
Dielectrics
7%
Nanowire
7%
Properties
7%
Applications
7%
Applied Voltage
6%
Elements
6%
Thin Films
6%
Nodes
6%
Reactive Sputtering
6%
Physics
Memory
33%
Resistive Switching
25%
Switching
22%
Thin Films
19%
Oxide
18%
Thin Films
15%
Quantum Dot
10%
Percolation
10%
Pulsed Laser Deposition
10%
Transistor
9%
Transition Metal
9%
Electric Potential
8%
Substrates
8%
Electrodes
8%
Utilization
7%
Yttria-Stabilized Zirconia
7%
Diode
7%
Semiconductor
7%
Polycrystalline
6%
Defects
5%
Memristor
5%
Relaxation Time
5%
Pulses
5%
Temperature
5%
Electrical Properties
5%
Oxygen Vacancy
5%
Cycles
5%
Exciton
5%
Room Temperature
5%
Hexagonal Boron Nitride
5%
Stacking
5%
Oxygen Plasma
5%
Transmission Electron Microscopy
5%
Theoretical Model
5%
Domain Wall
5%
Magnetic Field
5%
Thermoelectric Material
5%
Transport Property
5%
First Principle
5%
Phonon
5%